Identification of extremely radiative nature of AlN by time-resolved photoluminescence

Onuma, Takeyoshi; Hazu, K.; Uedono, Akira; Sota, Takayuki; Chichibu, S. F.

doi:10.1063/1.3284653

Cited by 34 publications

(32 citation statements)

References 25 publications

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“…Since the decrease of both the localization degree and the PL linewidth at the Al compositions above 0.61 is slight compared to the decrease in the radiative recombination lifetime, the rapid decrease in the radiative recombination lifetime is not explained only by the decrease in the effect of exciton localization. Moreover, the values of FWHM of XRCs for both (0002) and (10)(11)(12) planes are found to be almost unchanged for the samples with the Al compositions above 0.54. Therefore, we consider that the rapid decrease in the radiative recombination lifetime is due to the increase in the oscillator strength of excitons in addition to the decrease in the effect of exciton localization with increasing Al composition.…”

Section: Contributed Articlementioning

confidence: 74%

“…The thickness and the Si concentration of the Si-doped AlGaN layers were 0.8 μm and 3.7×10 17 cm -3 , respectively. The values of full width at half maximum (FWHM) of x-ray rocking curves (XRCs) for (0002) and (10)(11)(12) The excitation source was an ArF excimer laser (λ=193 nm). The pulse width and the repetition rate were 2.5 ns and 50 Hz, respectively.…”

Section: Methodsmentioning

confidence: 99%

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Recombination dynamics of localized excitons in Al_xGa_1‐xN (0.37<x<0.81) ternary alloys

Murotani

Kittaka

Kurai

et al. 2011

Phys. Status Solidi C

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Section: Contributed Articlementioning

confidence: 74%

Section: Methodsmentioning

confidence: 99%

Recombination dynamics of localized excitons in Al_xGa_1‐xN (0.37<x<0.81) ternary alloys

Murotani

Kittaka

Kurai

et al. 2011

Phys. Status Solidi C

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“…The low temperature (12 K) cathodoluminescence (CL) spectra recorded on high temperature grown AlN films were characterized by sharp excitonic emission peaks with weak broad defect-band emission. [59] In contrast, the CL spectra from samples grown at relatively low temperatures revealed intense defect-band emission with broad near band edge emission. Time-resolved photoluminescence (TRPL) and time-resolved cathodoluminescence (TRCL) measurements for high Al-molar fraction AlGaN films also confirmed that high temperature growth with appropriate defect management is preferable to reduce nonradiative recombination, which is crucial for high IQE in DUV LEDs.…”

Section: Growth and Optical Properties Of Bulk Aln For Duv Ledsmentioning

confidence: 74%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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“…In AlN films grown at high temperatures (above 1350 • C), they were found to be below the detection limit of SIMS, while for AlN grown below 1200 • C, the Si, C, and O concentrations were of the order of 10 18 -10 19 cm −3 . The low temperature (12 K) cathodoluminescence (CL) spectra recorded on high temperature grown AlN films were characterized by sharp excitonic emission peaks with weak broad defect-band emission [62]. In contrast, the CL spectra from samples grown at relatively low temperatures revealed intense defect-band emission with broad near band edge emission.…”

Section: High-temperature Growth Of Aln and High Al-molar Fraction Almentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

et al. 2017

View full text Add to dashboard Cite

Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Identification of extremely radiative nature of AlN by time-resolved photoluminescence

Cited by 34 publications

References 25 publications

Recombination dynamics of localized excitons in Al_xGa_1‐xN (0.37<x<0.81) ternary alloys

Recombination dynamics of localized excitons in Al_xGa_1‐xN (0.37<x<0.81) ternary alloys

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

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Identification of extremely radiative nature of AlN by time-resolved photoluminescence

Cited by 34 publications

References 25 publications

Recombination dynamics of localized excitons in AlxGa1‐xN (0.37<x<0.81) ternary alloys

Recombination dynamics of localized excitons in AlxGa1‐xN (0.37<x<0.81) ternary alloys

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

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Recombination dynamics of localized excitons in Al_xGa_1‐xN (0.37<x<0.81) ternary alloys

Recombination dynamics of localized excitons in Al_xGa_1‐xN (0.37<x<0.81) ternary alloys