Thin metal films as absorbers for infrared sensors

Bauer, Siegfried; Bauer‐Gogonea, S.; Becker, Wolfgang; Fettig, Rainer K.; Ploss, B.; Ruppel, Wolfgang; Münch, Waldemar von

doi:10.1016/0924-4247(93)80085-u

Cited by 37 publications

(18 citation statements)

References 9 publications

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“…[5] Most recent developments in this field are attained using silver thin films. [5,6] Other technologically relevant applications of silver thin films include the surface-plasmon enhancement of fluorescence, luminescence and Raman scattering, [7,8] high temperature superconducting systems, [9] anti-bacterial layers, [10] absorbers for infrared sensors, [11] waveguides, [12] and catalysis. [13,14] Silver thin films are mostly grown by physical vapor deposition (PVD), electrochemical deposition, and electroless methods.…”

Section: Introductionmentioning

confidence: 99%

Alcohol‐Assisted CVD of Silver Using Commercially Available Precursors

Bahlawane

Premkumar

Brechling

et al. 2007

Chemical Vapor Deposition

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A novel chemical approach was demonstrated for the growth of high-quality, silver films by CVD. This concept relies on the catalytic reactivity of cationic silver, and of silver surfaces with alcohols. This leads to high-purity films using either state-ofthe-art precursors or silver salts that have not been yet considered as CVD precursors. The occurrence of the catalytic oxidative-dehydrogenation of alcohols, considered as the driving force in this process, was shown by in-situ mass spectrometry (MS). Films of fcc-Ag with q ≤ 2 lX cm were grown without any noticeable contamination. Ag(hfac)COD leads to the growth of a (111) highly orientated film on glass at a rate of 1.66 nm min -1 , while polycrystalline films are grown at a rate of 18.5 nm min -1 using AgNO 3 .

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Section: Introductionmentioning

confidence: 99%

Alcohol‐Assisted CVD of Silver Using Commercially Available Precursors

Bahlawane

Premkumar

Brechling

et al. 2007

Chemical Vapor Deposition

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“…The absorbance of thin metal films is independent of the wavelength of the radiation, as long as the radiation frequency is smaller than the reciprocal collision time of the electrons in the metal film, which can be described as the relaxation rate ω c in Drude model [15]. Drude metal exhibits a frequency dependent complex resistivity, is the angular frequency of incident radiation and ρ 0 is its DC resistivity.…”

Section: Multi-band Absorber Using Silicon Nitride/nano-chromiummentioning

confidence: 99%

Uncooled Focal Plane Array for Multiband IR Imaging Using Optical-Readout Bimaterial Cantilevers

Wang

Wen

et al. 2015

J. Microelectromech. Syst.

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This paper presents the design, fabrication, and performance of a 256 × 256 multiband infrared (IR) focal plane array (FPA) using microbimaterial cantilever as the sensitive pixel. Different from traditional uncooled IR FPA that works only at long wavelength IR, the working bandwidth of the presented FPA is extended to full band IR, covering the three IR atmospheric windows of 1-2.5 µm, 3-5 µm and 8-14 µm simultaneously. The multiband performance is attributed to the elaborately designed multiband absorber consisting of a stacked layer of silicon nitride, chromium nanofilm, and gold mirror. The absorbing mechanism of the stacked layer is discussed in detail and testified by experimental results. Images of short-wavelength, middle-wavelength, and long-wavelength IR were captured successfully with the single FPA. The measured sensitivity and noise equivalent temperature difference of the FPA are 0.18 µm/K and 194.7 mK, respectively.[ 2014-0090]Index Terms-Focal plane array (FPA), infrared (IR) imaging, multi-band absorption, Cr nano-film. 1057-7157

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“…[5,6] Silver layers can be produced by many deposition techniques, e.g., galvanic, sol±gel, [7] photochemical deposition, [8] thermal evaporation, [9] or pulsed laser deposition. [10] CVD is an alternative method of growing high purity films, particularly relevant to the metallization of microelectronic and optical devices.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Silver Trimethylacetate Complexes with Tertiary Phosphines as CVD Precursors of Thin Silver Films

Piszczek¹,

Szłyk

Chaberski

et al. 2005

Chem. Vap. Deposition

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and 100 nm were deposited from the above compounds using hot-wall and cold-wall CVD techniques on Si(111) and Si(100) substrates in the temperature range 180-220 C, under the reactor pressure 1±3 mbar. Metallic films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), glow discharge optical emission spectroscopy (GDOES), scanning electron microscopy (SEM), and conductivity measurements.

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Thin metal films as absorbers for infrared sensors

Cited by 37 publications

References 9 publications

Alcohol‐Assisted CVD of Silver Using Commercially Available Precursors

Alcohol‐Assisted CVD of Silver Using Commercially Available Precursors

Uncooled Focal Plane Array for Multiband IR Imaging Using Optical-Readout Bimaterial Cantilevers

Characterization of Silver Trimethylacetate Complexes with Tertiary Phosphines as CVD Precursors of Thin Silver Films

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