COOAg (2) have been used as precursors for the CVD of silver layers in the temperature range 493±623 K. The thin films obtained were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), scanning tunneling electrochemical microscopy (STEM), X-ray photoelectron spectroscopy (XPS), and temperature variable infrared (IR) measurements. The SEM images of Ag films grown from 2 exhibited a surface with a grain size in the range 0.4±1.5 lm, whereas from 1 the size was~0.1 lm. This was confirmed by the STEM studies. The better stability of 1 in the vapor phase was proved by temperature variable IR spectra (373±523 K). Mass spectrometry (MS) images confirmed the presence of the monomeric and dimeric species, and the recombination ions transported in vapors. The XPS image analysis of the silver layers revealed the presence of some carbon impurities. The films demonstrated good adhesion to silicon substrates.

and 100 nm were deposited from the above compounds using hot-wall and cold-wall CVD techniques on Si(111) and Si(100) substrates in the temperature range 180-220 C, under the reactor pressure 1±3 mbar. Metallic films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), glow discharge optical emission spectroscopy (GDOES), scanning electron microscopy (SEM), and conductivity measurements.

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CVD of Ag I Complexes with Tertiary Phosphines and Perfluorinated Carboxylates -A New Class of Silver Precursors.-Thin Ag films are prepared by CVD in the temperature range 493-623 K using C 2 F 5 COOAgPMe 3 (I) and C 2 F 5 COOAg (II) as precursors. The films are characterized by XRD, SEM, STEM, XPS, and temperature variable IR spectroscopy. The results reveal the influence of the tertiary phosphine on the morphology of the layers deposited. The variation of film morphology can be related to the sublimation and thermal decomposition mechanisms of (I) and (II). Temperature and deposition time are the main factors affecting the quality of films. In comparison to known CVD precursors compounds (I) and (II) have the advantages of lower decomposition temperature at smaller vacuum (4 mbar), and a shorter deposition time. -