Characterization of Silver Trimethylacetate Complexes with Tertiary Phosphines as CVD Precursors of Thin Silver Films

Piszczek, Piotr; Szłyk, Edward; Chaberski, Michat; Taeschner, Christine; Leonhardt, A.; Bała, W.; Bartkiewicz, K.

doi:10.1002/cvde.200406323

Cited by 34 publications

(35 citation statements)

References 24 publications

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“…The synthesis of Cu(I) and Ag(I) metal organic complexes is commonly achieved by reacting a transition metal salt with the desired oxidation state with a combination of an anionic ligand and a -donor ligand in a one-pot reaction followed by purification [163][164][165][166][167][168][169][170][171][172][173][174][175][176][177][178]. Similarly, Cu(II) MC precursors are obtained in an analogous manner from Cu(II) salts [179][180][181][182].…”

Section: Metal Complexes Applicable To Inkjet Ink Formulationsmentioning

confidence: 99%

Metal-based Inkjet Inks for Printed Electronics

Kamyshny¹,

Steinke²,

Magdassi

2011

TOAPJ

366

242

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Abstract:A review on applications of metal-based inkjet inks for printed electronics with a particular focus on inks containing metal nanoparticles, complexes and metallo-organic compounds. The review describes the preparation of such inks and obtaining conductive patterns by using various sintering methods: thermal, photonic, microwave, plasma, electrical, and chemically triggered. Various applications of metal-based inkjet inks (metallization of solar cell, RFID antennas, OLEDs, thin film transistors, electroluminescence devices) are reviewed.

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Section: Metal Complexes Applicable To Inkjet Ink Formulationsmentioning

confidence: 99%

Metal-based Inkjet Inks for Printed Electronics

Kamyshny¹,

Steinke²,

Magdassi

2011

TOAPJ

366

242

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“…Hydrogen bonds display an almost continuous distribution of OÁÁÁO distance between 2.36 and 3.69 Å and have been subdivided into classes which are referred to us as 'very strong' (<2.5 Å), 'strong' (2.5-2.65 Å), 'medium' (2.65-2.80 Å), or 'weak' (>2.80 Å). [33] For complex 2b, the oxygen-oxygen distance is 2.791(4) Å and can be considered as 'medium', which is also typical for Mn(III) compound {[Mn (C 18 [34] The Ag-P distances [2.410 (9), 2.440 (10) Å] are close to the sum of covalent radio of P and Ag atoms (2.44 Å) [35] and shorter than that of [(R 3 P) 2 AgPI] (PI = C 8 H 4 NO 2 ) [2.4944(7) Å]. [36] The angles of P-Ag-P [135.…”

Section: Single-crystal Structure Of 2bmentioning

confidence: 98%

“…Complex 2b crystallizes in the monoclinic with space group P2 1 /c, which is composed of one molecule of [(Ph 3 P) 2 ÁAgNC 4 H 4 O 3 ] and one molecule of methanol (Fig. 1).…”

Section: Single-crystal Structure Of 2bmentioning

confidence: 99%

“…A single crystal of [(Ph 3 P) 2 ÁAgNC 4 H 4 O 3 ÁCH 3 OH] (2b) could be grown by slowly cooling a saturated methanol solution containing 2b to À20 C. The molecular structure of 2b is depicted in Fig. 1.…”

Section: Single-crystal Structure Of 2bmentioning

confidence: 99%

“…[1,2] Applications include contacts in microelectronics, [3] components of high-temperature superconducting materials, [4] magnetics, [5] and bactericidal coatings. [6] Silver films have been mostly grown by physical vapor deposition (PVD), electrochemical deposition, and electroless methods.…”

Section: Introductionmentioning

confidence: 99%

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Organophosphine/phosphite‐stabilized silver(I) complexes bearing N‐hydroxysuccinimide ligand: synthesis, solid state structure and their potential use as MOCVD precursors

Tao

Shen

Tang

et al. 2012

Applied Organom Chemis

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Six organophosphine/phosphite-stabilized silver(I) N-hydroxysuccinimide complexes of type [C 4 H 4 NO 3 AgÁL n ] (L = PPh 3 ; n = 1, 2a; n = 2, 2b; L = P(OEt) 3 ; n = 1, 2c; n = 2, 2 d; L = P(OMe) 3 ; n = 1, 2e; n = 2, 2f) were prepared. These complexes were obtained in high yields and characterized by elemental analysis, 1 H NMR, 13 C{ 1 H} NMR and IR spectroscopy, respectively. The molecular structure of 2b has been determined by X-ray single-crystal analysis in which the silver atom is in a distorted tetrahedral geometry. An interstitial methanol solvent molecule is hydrogen bonded to the oxygen atom of N-hydroxysuccinimide molecule. Complex 2f was used to deposit silver films by metal-organic chemical vapor deposition (MOCVD) for the first time. The silver film obtained at 480 C is dense and homogeneous, which is composed of many well-isolated, granular particulates spreading all over the substrate surface.

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Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Winter

Knisley

Kalutarage

et al. 2012

Encyclopedia of Inorganic and Bioinorganic Chemistry

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This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors that have been reported since 2004, which corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4– 11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, stable thermally complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation because of the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity because of the importance of several mixed oxide phases and the applications of zirconium oxide and hafnium oxide as high‐permittivity gate materials in microelectronic devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronic devices. The deposition of copper and other first‐row transition‐metal films from metal‐organic precursors is driven by the urgent need for copper metalization procedures in microelectronics device manufacturing. The atomic layer deposition (ALD) growth of the noble metals ruthenium, rhodium, iridium, palladium, and platinum has been a very active research area. The current state of metal‐organic precursor development is presented for each of these metallic elements.

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Characterization of Silver Trimethylacetate Complexes with Tertiary Phosphines as CVD Precursors of Thin Silver Films

Cited by 34 publications

References 24 publications

Metal-based Inkjet Inks for Printed Electronics

Metal-based Inkjet Inks for Printed Electronics

Organophosphine/phosphite‐stabilized silver(I) complexes bearing N‐hydroxysuccinimide ligand: synthesis, solid state structure and their potential use as MOCVD precursors

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

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