Thickness-modulated lateral MoS<sub>2</sub> diodes with sub-terahertz cutoff frequency

Askar, Abdelrahman M.; Saeed, Mohamed; Hamed, A.; Negra, Renato; Adachi, Michael M.

doi:10.1039/d1nr00089f

Cited by 9 publications

(6 citation statements)

References 35 publications

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“…43,44 Raman spectroscopy measurements of the free-standing and supported parts of the MoS 2 flake are shown in Figure 1d; the characteristic peaks of the in-plane (E 2g ) mode located at ≈384 cm −1 and the out-of-plane (A 1g ) mode located at ≈408 cm −145 indicate that the substrate-supported and free-standing MoS 2 flakes are 2H-phase. 46 Note that there is no indication of partial 2H-1T′ phase transition that has been previously reported in suspended MoS 2 monolayers. 47,48 2a), which is in agreement with other substrate-supported MoS 2 flakes in the literature.…”

Section: ■ Results and Discussionmentioning

confidence: 67%

“…Figure S3 shows the SEM (at an angle of 15°) and AFM characterization of a free-standing device, confirming that the devices were completely suspended. Multilayer MoS 2 has an indirect band gap of ∼1.3 eV and high visible light absorption. , Raman spectroscopy measurements of the free-standing and supported parts of the MoS 2 flake are shown in Figure d; the characteristic peaks of the in-plane ( E 2g ) mode located at ≈384 cm –1 and the out-of-plane ( A 1g ) mode located at ≈408 cm –1 indicate that the substrate-supported and free-standing MoS 2 flakes are 2H-phase . Note that there is no indication of partial 2H-1T′ phase transition that has been previously reported in suspended MoS 2 monolayers. , …”

Section: Resultsmentioning

confidence: 99%

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Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications

Abnavi

Ahmadi

Hasani

et al. 2021

ACS Appl. Mater. Interfaces

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Recently, atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) have attracted great interest in electronic and opto-electronic devices for highintegration-density applications such as data storage due to their small vertical dimension and high data storage capability. Here, we report a memristor based on free-standing multilayer molybdenum disulfide (MoS 2 ) with a high current on/off ratio of ∼10 3 and a stable retention for at least 3000 s. Through light modulation of the carrier density in the suspended MoS 2 channel, the on/off ratio can be further increased to ∼10 5 . Moreover, the essential photosynaptic functions with short-and long-term memory (STM and LTM) behaviors are successfully mimicked by such devices. These results also indicate that STM can be transferred to LTM by increasing the light stimuli power, pulse duration, and number of pulses. The electrical measurements performed under vacuum and ambient air conditions propose that the observed resistive switching is due to adsorbed oxygen and water molecules on both sides of the MoS 2 channel. Thus, our free-standing 2D multilayer MoS 2 -based memristors propose a simple approach for fabrication of a low-power-consumption and reliable resistive switching device for neuromorphic applications.

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Section: ■ Results and Discussionmentioning

confidence: 67%

Section: Resultsmentioning

confidence: 99%

Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications

Abnavi

Ahmadi

Hasani

et al. 2021

ACS Appl. Mater. Interfaces

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“…In addition, the current saturation in the device output characteristics have led to maximum extrinsic fT and fmax of 4 GHz and 10 GHz, respectively, in devices on flexible substrates [4] . Finally, MoS2-based diodes have been used to build low power flexible integrated transceivers [30,31] .…”

Section: Introductionmentioning

confidence: 99%

“…[ 4 ] Finally, MoS 2 ‐based diodes have been used to build low‐power flexible integrated transceivers. [ 30,31 ]…”

Section: Introductionmentioning

confidence: 99%

“…[4] Finally, MoS 2 -based diodes have been used to build low-power flexible integrated transceivers. [30,31] Based on these considerations, MoS 2 -based low-power wireless transceivers are an attractive and feasible goal toward implementing high-performance microwave electronic circuits on flexible substrates. However, while radio-frequency (RF) mixers [5,32] and amplifiers [6] operating in the megahertz range have been reported, power detectors as important building blocks are still missing.…”

Section: Introductionmentioning

confidence: 99%

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Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

et al. 2022

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We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS2 field effect transistors (FETs). The MoS2 FETs are fabricated using a wafer-scale process on 8 µm thick Polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS2 sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS2, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.

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Programmable Photovoltaics of Metal‐Oxide‐Semiconductor Junction

Zhang

et al. 2022

Adv Elect Materials

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The era of internet of things [3] has witnessed the rapid growth of edge sensors. [4] The abundant data generated from the edge sensors are a tremendous challenge to the central computing source. [5] One solution to this challenge is processing the data near or in the edge of sensors, known as near-sensor-computing or in-sensorcomputing. [6] The in-sensor-computing requires the sensor device blocks to generate a tunable response to the physical stimulation. The tunable response to physical stimulations enables the combination of the functions of sensing and computing, and allows synchronous signal collecting and processing. Among all the senses, vision is the most important and human perceive up to 80% of all impressions by means of sight. [7] Herein programmable photodetectors with tunable photoelectrical response are key to achieving insensor-computing machine vision system or the state-of-art artificial retina. [8] The photovoltaic effect is one of the most important mechanisms to generate self-powered optical-electrical response, which is usually seen at the p-n junction, [9] Schottky junction, [10] or heterojunctions [11] where the built-in electric field can separate the photon stimulated hole and electrons. The photovoltaic effect at the p-n junction, Schottky junction, or heterojunctions is usually not tunable and lacks programmability. The switchable photovoltaic effect has been reported in ferroelectric materials, such as the BiFeO 3 and organic perovskites, [12] however, the large bandgap of BiFeO 3 (up to 2.7 eV) allows only photoresponse to high-energy band photons, and the stability of organic perovskites is to be improved. Metal-oxide-semiconductor (MOS) junction with a gate-tunable band structure has been massively used in switch devices such as MOS field-effect-transistors and insulated gate bipolar translators. [13] Taking use of the MOS field effect, lateral p-n junction of 2D materials such as WSe 2 and black phosphorous has been demonstrated using local split gates, which form a photovoltaic sensitive region between the split gates. [14] By far, the MOS junction has rarely been related to photovoltaics as its mirror symmetry hinders the net photocurrent or photovoltage between source and drain. Here we report a transition metal dichalcogenide (TMDC) photodetector device based on the MOS junction with broken mirror symmetry generating a programmable photovoltaic response. The sensor takes advantage of the field effect tunable band structure, and generates an adjustable or even reversible out-of-plane photovoltaic effect Programmability, fundamental to the computing of electronic systems, is traditionally achieved in processing and memory modules. Recently, the emergence of in-sensor computing allows the programmability of the sensing modules and the process of raw data upon the sensor edge, which reduces data transport and energy consumption. Here, a programmable photodetector module with a tunable photoelectric response based on molybdenum sulfide (MoS 2 ) metal-oxide-semiconductor (MOS) j...

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Thickness-modulated lateral MoS₂ diodes with sub-terahertz cutoff frequency

Abstract: Thickness-modulated lateral MoS2 diodes with an extracted benchmark cutoff frequency ( fc) of up to 126 GHz are implemented and fully characterised. Fabricated diodes demonstrate on-off current ratio of more...

Cited by 9 publications

References 35 publications

Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications

Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

Programmable Photovoltaics of Metal‐Oxide‐Semiconductor Junction

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Thickness-modulated lateral MoS2 diodes with sub-terahertz cutoff frequency

Abstract: Thickness-modulated lateral MoS2 diodes with an extracted benchmark cutoff frequency ( fc) of up to 126 GHz are implemented and fully characterised. Fabricated diodes demonstrate on-off current ratio of more...

Cited by 9 publications

References 35 publications

Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications

Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications

Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

Programmable Photovoltaics of Metal‐Oxide‐Semiconductor Junction

Contact Info

Product

Resources

About

Thickness-modulated lateral MoS₂ diodes with sub-terahertz cutoff frequency

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates