Thermal stability and gap-fill properties of spin-on MSQ low-k dielectrics

Ahner, Nicole; Schulz, Stefan E.; Blaschta, F.; Rennau, M.

doi:10.1016/j.mee.2007.06.007

Cited by 18 publications

(14 citation statements)

References 1 publication

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“…Low dielectric constant (low‐k) materials have attracted great attentions of scientists and engineers worldwide because they make it possible for transmitting information at higher speed; in addition, these materials are desirable to reduce the resistor–capacitor time constant of interconnect structures and the cross‐talk between adjacent lines 1, 2…”

Section: Introductionmentioning

confidence: 99%

Synthesis of mesoporous silica and its modification of bismaleimide/cyanate ester resin with improved thermal and dielectric properties

Liang

et al. 2011

Polymers for Advanced Techs

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A novel method is proposed to synthesize new mesoporous silica containing amine groups (MPSA), and it was further employed to modify bismaleimide-dialllyl bisphenol (BD)/cyanate ester (CE) resin to form novel MPSA/BD/CE hybrids; in addition, the typical properties of MPSA/BD/CE were systematically investigated. Results show that these hybrids have very low dielectric constant and loss as well as good thermal properties. Compared with BD/CE resin, all hybrids have not only decreased dielectric constant and loss but also similar dependence of dielectric properties on frequency over the whole frequency from 10 to 10 6 Hz. Specifically, with the addition of MPSA to BD/CE resin, the dielectric constant reduces from 3.5 to 3.0, and the dielectric loss is only 85% of that of BD/CE resin. Note that all hybrids show better thermal resistance (reflected by higher glass transition temperature, decreased maximum degradation rate, and higher char yield at 800-C) than BD/CE resin. All these differences in macro-properties are attributed to the different structure between MPSA/BD/CE hybrids and BD/CE resin.

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Section: Introductionmentioning

confidence: 99%

Synthesis of mesoporous silica and its modification of bismaleimide/cyanate ester resin with improved thermal and dielectric properties

Liang

et al. 2011

Polymers for Advanced Techs

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“…Elles ont pour principal objectif de trouver des matériaux thermiquement stables durant le procédé de fabrication des circuits intégrés [80,81]. Des conclusions similaires sont données avec des MSQ (LK2000 et Accuglass T M ) recuits jusqu'à 700°C [83], le retrait des groupements -CH x provoquant une augmentation de la constante diélectrique et des courants de fuite au delà de 600°C.…”

Section: Diélectriques Low-κ Non Poreuxunclassified

Effect of Thermal Annealing on Low-K Dielectrics for iBEOL in View of 3D Sequential Integration

Beaurepair

Jousseaume

Gonon

et al. 2018

2018 IEEE International Interconnect Technology Conference (IITC)

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“…8 PEB in air, which contains oxygen molecules, also accelerates the mechanism so that Si-CH 3 reacts to form Si-O. 10 The wetting ability of these chemical bonds is as follows: Si-OH > Si-CH 3 Si-O. As a result, PEB causes high contrast between EB exposed areas and un-exposed area, thus, high vertical anisotropy structures are easily formed.…”

Section: Fabrication Of Submicron Order High-aspect-ratio Structure mentioning

confidence: 99%

Effect of Post Exposure Bake in Inorganic Electron Beam Resist and Utilizing for Nanoimprint Mold

Shizuno¹,

Taniguchi²,

Ogino³

et al. 2009

J. Nanosci. Nanotech.

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A high-aspect-ratio structural mold has been fabricated using a simple process that comprises of electron beam lithography (EBL) and post exposure bake (PEB) of inorganic resist. Using developed inorganic resist for mold, pattern transfer to a photo-curable polymer was carried out by ultraviolet nanoimprint lithography (UV-NIL). The developed inorganic resist has enough hardness to be used for mold because this resist structure is almost equivalent to that of quartz. The aspect ratio of the fabricated mold with PEB was 2.59; this value is twice the size of aspect ratio of fabricated mold without PEB (1.16). Thus, PEB is very effective in fabricating high-aspect ratio pattern in inorganic resist. The size of the fabricated mold with PEB was 1004 nm developed depth and 388 nm line and 252 nm space. Using the mold, UV-NIL was carried out. The size of replicated pattern was 942 nm height and 278 nm line and 241 nm space. The replicated height and line width were slightly smaller than mold depth and line width because of volume shrinkage of photo-curable polymer by UV irradiation. The aspect ratio of the replicated pattern using the mold with PEB was 3.39; thus, high-aspect-ratio transfer was also possible. This process is useful for rapid fabrication of quarter wavelength plates.

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Thermal stability and gap-fill properties of spin-on MSQ low-k dielectrics

Cited by 18 publications

References 1 publication

Synthesis of mesoporous silica and its modification of bismaleimide/cyanate ester resin with improved thermal and dielectric properties

Synthesis of mesoporous silica and its modification of bismaleimide/cyanate ester resin with improved thermal and dielectric properties

Effect of Thermal Annealing on Low-K Dielectrics for iBEOL in View of 3D Sequential Integration

Effect of Post Exposure Bake in Inorganic Electron Beam Resist and Utilizing for Nanoimprint Mold

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