2014
DOI: 10.1016/j.matlet.2014.04.105
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Thermal conductivity of partially amorphous porous silicon by photoacoustic technique

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Cited by 20 publications
(21 citation statements)
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“…During the experiment the following were used: acetylcholinesterase (acetylcholine hydrolase, EC 3.1.1.7, acetylcholinesterase from human erythrocytes), acetylthiocholine iodide, 5,5 -dithio-bis(2-nitrobenzoic acid), neostigmine methyl sulfate and MgCl 2 , purchased from Sigma-Aldrich, NaCl (Daejung Chemical and Metals Co., Ltd), ethanol, water (Samchun Chemicals), HF (48 %, w/w; Merck) and boron-doped p-type silicon wafers with a resistivity of [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] cm and thickness 500-550 μm (obtained from Cree Co.). The photoluminescence spectra and relative photoluminescence intensities were measured on an FS-2 fluorescence spectrometer (Scinco) and LabRam HR-800 spectrometer (Horiba Jobin Yvon) with a He/Cd laser source (325 nm).…”
Section: Materials and Instrumentationmentioning
confidence: 99%
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“…During the experiment the following were used: acetylcholinesterase (acetylcholine hydrolase, EC 3.1.1.7, acetylcholinesterase from human erythrocytes), acetylthiocholine iodide, 5,5 -dithio-bis(2-nitrobenzoic acid), neostigmine methyl sulfate and MgCl 2 , purchased from Sigma-Aldrich, NaCl (Daejung Chemical and Metals Co., Ltd), ethanol, water (Samchun Chemicals), HF (48 %, w/w; Merck) and boron-doped p-type silicon wafers with a resistivity of [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] cm and thickness 500-550 μm (obtained from Cree Co.). The photoluminescence spectra and relative photoluminescence intensities were measured on an FS-2 fluorescence spectrometer (Scinco) and LabRam HR-800 spectrometer (Horiba Jobin Yvon) with a He/Cd laser source (325 nm).…”
Section: Materials and Instrumentationmentioning
confidence: 99%
“…The silicon wafer (boron-doped p-type silicon wafers with resistivity [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] cm and thickness 500-550 μm) was cut into chips sized 1×1 cm 2 and degreased with an ultrasonic bath of acetone for 5 min, and then rinsed in deionized water. After drying with nitrogen gas, silver paste was simply sputtered on to the back of the wafer to provide a back ohmic contact for anodization.…”
Section: Preparation Of Porous Silicon Surfacementioning
confidence: 99%
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“…(1 − P) 3 λ Si Drost et al 1995Gesele et al 1997Benedetto et al 1997Boarino et al 1999Lysenko et al 1999Amato et al 2000Périchon et al 2000Bernini et al 2001Bernini et al 2005Lettieri et al 2005Kihara et al 2005Gomès et al 2007Fang et al 2008De Boor et al 2011Amin-Chalhoub et al 2011Siegert et al 2012Newby et al 2013Valalaki and Nassiopoulou 2013Isaiev et al 2014Lucklum et al 2014Andrusenko et al 2014 FIGURE 9.1 Experimental data from the literature for thermal conductivity as a function of porosity, for as-anodized nano-and meso-porous silicon. Full symbols correspond to mesoporous silicon, and hollow symbols to nanoporous Si.…”
Section: Overview Of Thermal Conductivity Measurementsmentioning
confidence: 99%
“…The cross-sectional SEM images of samples 1 and 2 are shown, for example, in Fig. 1.http://arxiv.org/abs/1809.09692Investigation of thermal transport properties was performed by applying the PA technique in classical configuration[17,18], at room temperature. All samples placed in the PA cell were irradiated by a laser diode module with an output optical power of about 60 mW (seeFig.2) and a λ = 405 nm spectral wavelength.…”
mentioning
confidence: 99%