Theory of electrothermal behavior of bipolar transistors: part III-impact ionization

Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs

“…MC data Rickelt and Rein model [6] Rinaldi and d Alessandro model [9] New model MC data Rickelt and Rein model [6] Rinaldi and d Alessandro model [9] New model Here a represents the common-base current gain, and i à b is a normalized base critical current. As shown in [5], i à b depends only on the emitter window aspect ratio a = L E /W E (see Fig.…”

“…[6][7][8][9]). These models retain a reasonable accuracy only for a limited range of the collector voltage.…”

High power, high voltage FETs in linear applications: A user's perspective

“…An Internet search on high-voltage FET failures revealed several papers documenting thermal effects in certain types of large-area FETs that can result in failures well below their published specifications [3,4]. Although no one paper described our problem, we concluded that we likely did have a thermal stability issue specific to large-area, high-gain, lowresistance, high-voltage FETs in linear service.…”

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions

“…Impact ionization was enabled by exploiting in the cell macromodels the model for the avalanche multiplication factor proposed in [20], which was extended to account for a positive differential resistance (oI/oV > 0) of the avalanche curve (i.e., the I D -V DS characteristic corresponding to V GS = 0 V). The fitting parameters of the model were tailored by comparison with the measured UIS waveforms.…”