Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs

Sasso, Grazia; Costagliola, Maurizio; Rinaldi, N.

doi:10.1016/j.microrel.2010.07.081

Cited by 15 publications

(6 citation statements)

References 15 publications

(30 reference statements)

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“…Current dependence of G em is modeled with a dedicated parameter I toavl and is thus decoupled from epi-layer Kirk effect parameter I hc , an advantage over 504. The exponential form of current dependence in φ is largely empirical similar to the considerations of [15]. Accurate measurement of the intrinsic current dependence of G em is difficult due to self heating, neutral-base recombination, and parasitic resistance voltage drops, all of which can cause base current change with V CB in complex manners [16].…”

Section: Common-emitter Linearitymentioning

confidence: 91%

(Invited) Physics and Compact Modeling of SiGe HBT Linearity Using Mextram

Niu¹,

Zhang²,

Li³

et al. 2018

ECS Trans.

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This paper presents fundamentals of SiGe HBT RF linearity and its compact modeling using Mextram 504.12 and the latest Mextram, 505.00, for both common-emitter and common-base configurations.Collector-base junction depletion capacitance model is shown to be significant for accurate modeling of peak IP3 behavior, for which two new options are introduced in Mextram 505.00.Current dependence of avalanche factor is shown to be important for accurate modeling of IP3 peak. This is increasingly important in emerging RF applications requiring SiGe HBTs to operate at increasingly high VCB with negative IB .

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Section: Common-emitter Linearitymentioning

confidence: 91%

(Invited) Physics and Compact Modeling of SiGe HBT Linearity Using Mextram

Niu¹,

Zhang²,

Li³

et al. 2018

ECS Trans.

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“…where I C is collector current, I T 0 is an additional parameter to model current dependence, in a similar manner as in [9]. When I C ≪ I T 0 , the exponential term in ( 14) becomes unity and ( 14) reduces to (12).…”

Section: New M-1 Modelmentioning

confidence: 99%

“…Many M-1 models of different complexity exist [3], [5], [6], [7], [8], [9]. However, temperature dependence is often not modeled.…”

Section: Introductionmentioning

confidence: 99%

An Analytical Model of Avalanche Multiplication Factor for Wide Temperature Range Compact Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Zhang

Niu

2016

ECS Trans.

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This paper presents a new semi-empirical avalanche multiplication factor (M-1) model for wide temperature range compact modeling of SiGe HBTs. Current dependence of M-1 is also accounted for and shown to be important for accurate modeling of output characteristics at medium to high current levels of practical interest. The proposed model is implemented into an experimental version of Mextram and demonstrated to be effective from 93 K to 393 K.

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“…The following model was selected to describe the ξ dependence upon V CB [34]: V CB being equal to V CB /BV CBO ; BV CBO was extracted by increasing V CB while keeping the emitter floating. The experimental ξ -V CB curve was obtained by performing a CB measurement at an I E low enough to neglect SH and HI effects as [35], [36] …”

Section: Impact Ionizationmentioning

confidence: 99%

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

d’Alessandro

Sasso

Rinaldi

et al. 2016

IEEE Trans. Electron Devices

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This paper presents an improved variant of a dc method to experimentally evaluate the base resistance of a bipolar transistor. The technique relies on a device model associated with a simple parameter optimization methodology, and is suited for modern technologies wherein self-heating and impact-ionization effects play a relevant role. The approach is successfully applied to state-of-the-art SiGe:C heterojunction bipolar transistors for high-frequency applications, although it can in principle be exploited for any bipolar device. The accuracy of the method is verified by numerical and experimental procedures.

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Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs

Cited by 15 publications

References 15 publications

(Invited) Physics and Compact Modeling of SiGe HBT Linearity Using Mextram

(Invited) Physics and Compact Modeling of SiGe HBT Linearity Using Mextram

An Analytical Model of Avalanche Multiplication Factor for Wide Temperature Range Compact Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe:C HBTs

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