An extensive on-wafer experimental campaign is carried out to determine the thermal resistance dependence on scaling and emitter geometry in state-of-the-art toward-THz silicon-germanium bipolar transistors designed and fabricated within the framework of the European DOTFIVE project. The extraction is performed through a robust procedure which-differently from classic approaches-exploits an accurately calibrated thermometer relating base-emitter voltage to junction temperature. Experimental data are then used to assess the accuracy of scalable thermal resistance laws for advanced transistor models; it was found that at least four parameters are needed to ensure a favorable agreement over wide ranges of emitter widths and lengths.
Carrier mobility and energy relaxation time analytical models for hydrodynamic simulation of silicon-germanium hetero-junction bipolar transistors (HBTs) have been derived. In addition, some issues related to hydrodynamic simulation in commercial tools are discussed.
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