An Analytical Model of Avalanche Multiplication Factor for Wide Temperature Range Compact Modeling of Silicon-Germanium Heterojunction Bipolar Transistors

Abstract

This paper presents a new semi-empirical avalanche multiplication factor (M-1) model for wide temperature range compact modeling of SiGe HBTs. Current dependence of M-1 is also accounted for and shown to be important for accurate modeling of output characteristics at medium to high current levels of practical interest. The proposed model is implemented into an experimental version of Mextram and demonstrated to be effective from 93 K to 393 K.

Avalanche Modeling in Mextram 505 and Implications on Circuit Simulations

“…• swavl=1 (default) uses the semiempirical approach described in [10] to model the decrease of G EM with increasing J C .…”

(Invited) Physics and Compact Modeling of SiGe HBT Linearity Using Mextram

“…Temperature dependence of impact ionization coefficients, however, are treated as material constants instead of model parameters in Mextram 504 [11]. In Mextram 505.00 [12], a new model based on [14] is introduced:…”