Abstract:Abstract-The specifications of the current crop of highpower, high-voltage field-effect transistors (FETs) can lure a designer into employing them in high-voltage DC equipment. Devices with extremely low on-resistance and very high power ratings are available from several manufacturers. However, our experience shows that high-voltage, linear operation of these devices at near-continuous duty can present difficult reliability challenges at stress levels well-below their published specifications. This paper chro… Show more
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