The Temperature Dependence of the Etch Rates of GaAs , AlGaAs , InP , and Masking Materials in a Boron Trichloride:Chlorine Plasma

Abstract

The pressure, temperature, and power effects are examined independently of each other for normalGaAs , normalAlGaAs , and normalInP in a boron trichloride:chlorine plasma. Conditions are examined for which chemical etching and for which sputter‐assisted etching occur. The variation of etch rate with change in temperature are discussed. For fixed temperatures the normalGaAs etch rates actually decrease with increased power in the low pressure regime. For normalInP the etch rates increase with increasing power at fixed temperatures.

In situ fiber optic thermometry of wafer surface etched with an electron cyclotron resonance source

“…1 For wafers etched by plasma generated using an ECR source, the wafer temperature can increase dramatically due to the high ion flux at the surface. 1 For wafers etched by plasma generated using an ECR source, the wafer temperature can increase dramatically due to the high ion flux at the surface.…”

“…[1][2][3] Elevated etch rates, smoother morphologies, and increased undercutting have been reported for higher wafer temperatures during reactive ion etching ͑RIE͒ and ion-beam assisted etching ͑IBAE͒. [1][2][3] Elevated etch rates, smoother morphologies, and increased undercutting have been reported for higher wafer temperatures during reactive ion etching ͑RIE͒ and ion-beam assisted etching ͑IBAE͒.…”

“…8 The Si surface temperature was measured using fluoroptic thermometry, and it increased by 60 to 100°C during rf sputtering at high bias voltage. 1 In this work, a fiber optic probe was used for in situ temperature measurements during etching with ECR generated plasmas of Ar and Cl 2 /Ar chemistries. 1 In this work, a fiber optic probe was used for in situ temperature measurements during etching with ECR generated plasmas of Ar and Cl 2 /Ar chemistries.…”

High‐temperature kinetic study for the reactive ion etching of InP in BCl3/Ar/O2

“…In recent work, CH,/C,H6/H, gas mixtures have been used; however, low etch rates and polymer deposition are a problem with hydrocarbon gases (Hayes et al, 1988(Hayes et al, , 1989. BCl,/Cl, gas mixtures have been used to etch Group 111-V semiconductors, primarily GaAs and aluminum (Contolini, 1988;Sonek and Ballantyne, 1984;Coop-Correspondence concerning this artlclc should be addressed lo H. S. Fogler.…”

Good Selectivity Between a NiCr Mask and GaAs and AlGaAs by Chemically Assisted Ion Beam Etching with Cl2 Gas

“…C12, SIC14, CC14, COC12, and CC12F2 have been used successfully to obtain high etching rates and smooth surfaces (14). CH4/H2 mixtures have become popular process gases when a low etching rate (-<50 nm/min) is desired for a III-V material (11,(15)(16). An increasingly popular variant of reactive ion beam etching (RIBE) is chemically assisted ion beam etching (CAIBE) (also known as ion beam assisted etching [IBAE]) where reactive gas is fed close to the substrate while the surface is bombarded by Ar ions from the ion gun (6)(7)(17)(18).…”