High‐temperature kinetic study for the reactive ion etching of InP in BCl₃/Ar/O₂

Abstract

The reactive ion etching kinetics of InP studied uses BCI,/Ar and

The formation of boron containing fragment ions from the ionization of BCl3

“…Boron trichloride (BCl 3 ) is widely used in the plasma etching of semiconductors and metals [1][2][3][4][5] and also to dope or deposit boron [6]. A recent report from the National Research Council addressing the "Database Needs for Modeling and Simulation of Plasma Processing" [7] highlighted the lack of reliable partial ionization cross-sections (PICSs) for industrially important molecules such as BCl 3 .…”

“…A recent report from the National Research Council addressing the "Database Needs for Modeling and Simulation of Plasma Processing" [7] highlighted the lack of reliable partial ionization cross-sections (PICSs) for industrially important molecules such as BCl 3 . Accurate values of relevant electron-impact ionization cross-sections are essential for the precise modeling and optimization of plasmas used in industry [8].…”