We report highly selective etching rates between a Ni‐Cr mask and
normalGaAs
and
normalAlGaAs
layers as well as highly anisotropic profiles in these materials at a nanometer scale using the Ni‐Cr mask and chemical assisted ion beam etching. The etching rates of Ni‐Cr,
normalGaAs
, and
normalAlGaAs
depend on
Cl2
gas flux, ion beam energy, and ion beam current density. Selectivities of the order of 40:1 and 8:1 between
normalGaAs
, respectively,
Al0.29Ga0.71normalAs
and
Ni0.7Cr0.3
, were obtained at an ion beam energy of 500 eV, beam current density of 0.2 mA/cm2, and a
Cl2
flow of 4.2 ml/min.
The etching of single-crystal silicon, CVD polysilicon, thermally grown silicon oxides, and Ni-Cr masks have been studied using a chemical-assisted ion beam etching (CAIBE) process. Etch rates were measured as functions of C13 gas flow rate, Ar § ion beam energy, and beam current density. Selectivities of Ni-Cr:Si, Ni-Cr:poly, and Ni-Cr:SiO3 of 1:10, 1:9, and 1:4 were determined. Vertical profiles were obtained down to at least 100 nm linewidths using CAIBE. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.88.90.140 Downloaded on 2015-04-03 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.88.90.140 Downloaded on 2015-04-03 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.88.90.140 Downloaded on 2015-04-03 to IP
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