Model based on trap-assisted tunneling for two-level current fluctuations in submicrometer metal–silicon-dioxide–silicon diodes

Soft breakdown fluctuation events in ultrathin SiO2 layers

“…In our case, this effect is not seen, since the current is always controlled by the conduction spots. Moreover, a modulation of the oxide conductance up to 10% has been observed by Farmer et al, 6 and up to 30% by Andersson et al, 7 while in the SBD regime, the amplitude of the fluctuations can be higher than the base current itself-see Fig. 2͑b͒.…”

“…RTS fluctuations occurring in tunnel oxides have been the subject of considerable theoretical and experimental investigation. [5][6][7] In general, these fluctuations have been ascribed to changes of charge or configuration of trap states exhibiting metastable behaviors. Although these blocking mechanisms cannot be ruled out, it is worth noting that we are dealing with a different conduction regime than those previously referred, and therefore a direct comparison of the switching characteristics is of relative value.…”

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

“…I g RTN has been observed in the MOSFET devices biased in accumulation [11,12] as well as inversion. Several behaviors in the time constants and the amplitude of current fluctuation with respect to gate voltages have been investigated and explained by the models based on trap assisted tunneling via a single electron trap [11] and ShockleyRead-Hall (SRH) theory [8,13]. However, there is no report about the drain bias effect on the I g RTN, even though it is indispensable to study the exact trap location in oxide for characterizing gate oxide properties.…”

“…Recently, study on the random telegraph noise in gate leakage current (I g RTN) has been drawing attention because gate current is more sensitive to oxide volume traps than drain current at ultra thin gate oxide or high-k gate dielectric [8][9][10][11][12][13]. I g RTN has been observed in the MOSFET devices biased in accumulation [11,12] as well as inversion.…”

“…The time constants vary with the gate voltages. The times for high and low current level are designated as capture time (s c ) and emission time (s e ), respectively, because each trapped electron in oxide during emission time blocks the current conduction through the gate oxide [8,11,13]. The amplitude between high and low current levels shows a slight increase from 60 fA to 110 fA as the gate voltage increases.…”