Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

Insulators for 2D nanoelectronics: the gap to bridge

“…As a result, in nanoscale 2D FETs capture and emission of a single carrier can strongly perturb the electrostatics inside the channel and thus cause RTN fluctuations in I D and V th . A few recent studies for MoS 2 FETs 94,96 have already established that in general the dynamics of RTN in 2D FETs are very similar to Si technologies 103,104 . For instance, it was demonstrated that charge trapping events causing RTN are the same as those responsible for the hysteresis and BTI 94 , with the unique characteristic of border traps being the exponential V G dependence of the time constants (Fig.…”

Investigation of Gate Etch Damage at Metal/High-$k$ Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current

“…The RTN in EDT current was measured on some nMOSFET devices with a gate length of 0.1−0.3 μm and a width of 0.5−10 μm. The experimental setup for measuring the RTN, which has been described in detail elsewhere [7], consisted of an SR 570 low-noise amplifier and an HP35670A dynamic signal analyzer. Fig.…”

“…Two kinds of RTN behaviors were also found in d ln(τ c /τ e )/dV gd as the same of the oxide traps observed in the channel region [5], [6]: One group of the devices showed a negative slope in the d ln(τ c /τ e )/dV gd , whereas the other group showed a positive slope. Considering the change of the difference between the trap's energy level and Fermi level of a Si substrate or a gate electrode with respect to V gd in the energy band diagram, the negative slope indicates that the oxide trap interacts with the Si channel due to the increase in the probability of trap occupation with V gd , while the positive slope in the d ln(τ c /τ e )/dV gd indicates that the oxide trap interacts with the gate electrode because the probability of electron trapping decreases with increasing V gd [5]- [7]. In the case of a negative slope in the d ln(τ c /τ e )/dV gd , the vertical location of oxide traps in the high-k/SiO 2 can be extracted by using the conventional equations as follows [6]: In the case of a positive slope, it can be extracted by using the next equations [6] x…”

“…In particular, the RTN which is attributed to the random trapping/detrapping process of carriers in the oxide traps is introduced as an effective way for analyzing single or multiple slow oxide traps in the gate dielectrics. Therefore, the RTN has been widely studied in several currents, such as drain current (I d ) [3], [4], gate leakage current (I g ) [5]- [7], gate-induced drain leakage (GIDL) current [8], and gate edge direct tunneling (EDT) current [8].…”

Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator

“…To verify this behavior, the effective trap energy in the switching layer depending on the read voltage and the device state was extracted with regard to the Fermi level by the RTN characteristics for each state using the Shockley-Read-Hall statistics. [59][60][61][62][63] Although this method reflects tunneling process since the capture cross section, which is the effective area of a trap including tunneling effect and activated process, is considered, these results might be the rough estimations since trapassisted tunneling process is not fully considered. Therefore, they are utilized not to extract accurate positions but for reference to understand the effect of the bias condition and device state on the RTN characteristics qualitatively.…”