The Influence of Defect Surface Layers on the Capacitive Properties of MOS Structures

Low‐pressure rf plasma treatment of the MIS structures is shown to anneal the ion‐implantation‐ induced defects in the semiconductor. In the course of such an annealing the sample temperature doesn't exceed 230 °C. In the case of prolonged rf plasma treatment of the initial MIS structures (about 30 min in the experiments) surface traps in the lower half of the silicon band gap appear. When the implanted MIS structures are treated for 30 min, the defects in the upper half of silicon band gap are completely annealed but the traps distributed in the space charge region of the semiconductor with levels in the lower half of band gap remain. The recombination‐enhanced annealing of deep traps is supposed to be responsible for the observed processes. This annealing is stimulated by X‐ray and high‐energy uv photon absorption in silicon and by a simultaneous applying an ac electric field to the MIS structure.

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RF plasma annealing of implanted MIS structures

Lysenko

Lokshin

Nazarov

et al. 1985

phys. stat. sol. (a)

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Electrical properties of 1 MeV helium implanted metal- oxide-semiconductor structures

Fahrner

Schneider

Gorey

1986

phys. stat. sol. (a)

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Helium ions of doses between 1012 and 3 × 1016 cm−2 are implanted into metal‐oxide‐semiconductor (MOS) structures with an energy of 1 MeV. Deep centers are induced which create a buried intrinsic layer in both, n‐ and p‐type silicon. This layer separates the surface region from the substrate by two n‐i and i‐n or p‐i and i‐p junctions. The structure is characterized by the measurements of the MOS admittance, the MOS channel admittance, MOS crosstalk, and spreading resistance. Advantages of this layer for isolation are seen in four facts: the formation of the two junctions is independent of the substrate type, the junctions are stable for temperatures beyond 1000 °C, they form a barrier for leakage currents from the bulk, and the layer acts as an additional gettering region.

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The Effect of Back Inversion Channel and Electrically Active Defects on the Nonequilibrium Characteristics of SOS MOS Structures

Dem’yanenko

1990

phys. stat. sol. (a)

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A theory is proposed for current–voltage characteristics of thin films on insulator MOS structures with an inverted back interface, that are nonequilibrium‐depleted by a linear voltage sweep. It is shown that the transfer of the transfer of the minority carriers through a potential barrier between the interfaces of the semiconductor film leads to the appearance of an additional current peak whose position depends on the temperature and barrier parameters. A method to determine the height of potential barrier and its effective distance from the back interface is proposed. Experimental data obtained for silicon films on sapphire are treated in terms of the theory proposed and the model of positively charged clusters of electron states.

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The Influence of Defect Surface Layers on the Capacitive Properties of MOS Structures

Cited by 6 publications

References 4 publications

RF plasma annealing of implanted MIS structures

RF plasma annealing of implanted MIS structures

Electrical properties of 1 MeV helium implanted metal- oxide-semiconductor structures

The Effect of Back Inversion Channel and Electrically Active Defects on the Nonequilibrium Characteristics of SOS MOS Structures

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