The Effect of Back Inversion Channel and Electrically Active Defects on the Nonequilibrium Characteristics of SOS MOS Structures

Abstract

A theory is proposed for current–voltage characteristics of thin films on insulator MOS structures with an inverted back interface, that are nonequilibrium‐depleted by a linear voltage sweep. It is shown that the transfer of the transfer of the minority carriers through a potential barrier between the interfaces of the semiconductor film leads to the appearance of an additional current peak whose position depends on the temperature and barrier parameters. A method to determine the height of potential barrier and its effective distance from the back interface is proposed. Experimental data obtained for silicon films on sapphire are treated in terms of the theory proposed and the model of positively charged clusters of electron states.