The I-V characteristics of a p+-n-p+ planar MOS transistor made by the standard technology under the regime of injecting p+-n source-substrate junction without and in the presence of an outer magnetic-field B, which deviates the carriers toward the Si-SiO 2 interface or in the opposite direction, were experimentally investigated. A control by B of the drain-source current IDS was observed. The current I DS and the control of its steepness through the gate bias considerably exceeded the values obtained in the absence of injection. This effect was explained with the increase of the part of the injected current-carriers from the channel at a growing gate bias and with the decrease of the effective distance source-drain. The magnetosensitivity can be connected with the hole current which is controlled by the magnetic-field and sharply increases with the drop of temperature
Current–voltage characteristics for double injection currents are studied in SOS diodes. Effective lifetimes and bipolar diffusion lengths of electron–hole pairs are evaluated. The transverse anisotropy of conductivity is shown to be unessential for the double injection currents. The possibility is proved to control the double injection currents by the field effect. Injection breakdown connected with carrier heating is observed under strong‐field conditions.
MOS structures, that contain a thin i‐layer at the semiconductor surface with high concentration of deep compensating defects are treated theoretically. The problem of the electrical potential distribution in the surface layer is solved. The value of the potential of the built‐in i‐n junction is determined. The frequency and temperature dependences of low signal conductivity of MOS structures are calculated. At low temperature the module of conductivity depends weakly on the temperature. The conclusions of the theory are experimentally confirmed on MOS structures implanted with silicon ions (defect i‐p junction) and boron ions (undefect p‐n junction).
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