RF plasma annealing of implanted MIS structures

Abstract

Low‐pressure rf plasma treatment of the MIS structures is shown to anneal the ion‐implantation‐ induced defects in the semiconductor. In the course of such an annealing the sample temperature doesn't exceed 230 °C. In the case of prolonged rf plasma treatment of the initial MIS structures (about 30 min in the experiments) surface traps in the lower half of the silicon band gap appear. When the implanted MIS structures are treated for 30 min, the defects in the upper half of silicon band gap are completely annealed but the traps distributed in the space charge region of the semiconductor with levels in the lower half of band gap remain. The recombination‐enhanced annealing of deep traps is supposed to be responsible for the observed processes. This annealing is stimulated by X‐ray and high‐energy uv photon absorption in silicon and by a simultaneous applying an ac electric field to the MIS structure.

Radio-Frequency Plasma Treatment and Thermal Annealing in Implanted Si Raman Study

“…From (3) it follows that the violation of selection rules due to disordering manifests itself in phonon band broadening and its frequency shift. The quantitative comparison supposes the choice of values of correlation lengths L at which the assymetric lineshape calculated according to (3) agrees with the experimentally measured one.…”

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

“…Results obtained for plasma treatment can be interpreted as follows. There exist several factors capable to influence on treated samples [10,11]: 1) low energy ion and electron bombarding; 2) X-ray and UV irradiation over a wide spectral range; 3) RF electromagnetic field; 4) thermal heating. Atoms and ions of hydrogen penetrate inside the nc-Si-SiO x film causing the following changes: neutralization of fixed charges, relaxation of mechanical strains, annealing of defects and reduction of surface states at the Si/SiO 2 interface.…”

“…Annealing of SiO x films in nitrogen atmosphere leads to slow growth in PL intensity up to 16 hours of its duration [8,9]. A more effective method of defect annealing in the silicon structure is the low-pressure RF plasma treatment [10,11]. This paper presents the results of investigation of PL in nc-Si/SiO 2 structures being passivated using hydrogen plasma and chemical treatments.…”

The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

“…For example, RF plasma processing may cause enhanced defect annealing in the near surface of the silicon substrate [2][3][4][5] as well as at the silicondioxide/silicon (SiO 2 /Si) interface and within the oxide [1,7]. It has recently been shown [8] that such a treatment also leads to efficient removal of the positive charge generated in the buried oxide of SIMOX (separation-by-implanted-oxygen) by strong-field electron injection.…”

“…Radio-frequency (RF) plasma treatment of ion-implanted metal-oxide-semiconductor (MOS) structures has been shown to result in substantial modification of their structural and electrical properties [1][2][3][4][5][6]. For example, RF plasma processing may cause enhanced defect annealing in the near surface of the silicon substrate [2][3][4][5] as well as at the silicondioxide/silicon (SiO 2 /Si) interface and within the oxide [1,7].…”