The Improvement of Low Temperature Mobility of InAs0.04Sb0.96 Epilayers with Cut Off Wavelength of 12.5 μm by Annealing

Gao, Yu; Kan, Hirofumi; Yamaguchi, Tomuo

doi:10.1002/1521-4079(200008)35:8<943::aid-crat943>3.0.co;2-e

Cited by 7 publications

(3 citation statements)

References 6 publications

(8 reference statements)

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“…The thick epilayers can be grown by melt epitaxy (ME) under the large lattice mismatch between the epilayers and the substrates. Melt epitaxy (ME) is a modified liquid phase epitaxy (LPE) method [9][10][11][12][13][14][15] . For ME growth, the temperature of the furnace was kept at 650 o C for 2 hours to mix the melt sufficiently.…”

Section: Methodsmentioning

confidence: 99%

Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy

Gao,

Chen,

Hayakawa

2024

Advanced Fiber Laser Conference (AFL2023)

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InAs0.02Sb0.82N0.16 thick epilayers have been grown on InAs substrates by melt epitaxy (ME) technology. Fourier transform infrared (FTIR) transmission spectra showed that the cutoff wavelength of InAs0.02Sb0.82N0.16 samples grown by ME is 10.0 µm indicating the band gap narrowing. The thickness of the epilayers grown by ME observed by scanning electron microscopy (SEM) reaches 183 µm. X-ray diffraction (XRD) measurements confirmed that the epilayers are single crystals. The full-width at half-maximum (FWHM) of InAs0.02Sb0.82N0.16 (400) CuKα1 diffraction peak is 298.8 arcsec. The high quality of the crystals benefits from the thickness of the epilayers exceeding 100 µm, which significantly suppresses the effect of the lattice mismatch between InAs0.02Sb0.82N0.16 epilayers and InAs substrates.Energy dispersive spectrometer (EDS) attached SEM measurements revealed that 16% nitrogen has been incorporated in the epilayers.

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Section: Methodsmentioning

confidence: 99%

Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy

Gao,

Chen,

Hayakawa

2024

Advanced Fiber Laser Conference (AFL2023)

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“…We have grown thick InAsSb epilayers on InAs substrates with cutoff wavelengths of 8-12 m by melt epitaxy (ME). [3][4][5][6][7][8] The thickness of the epilayers reached 100 m. This thickness effectively eliminated the affection of the lattice mismatch, and gave rise to a low dislocation density (the order of 10 4 cm À2 ) in the epilayers. In our previous paper, 8) immersion photoconductors with a response wavelength range of 2-9 m fabricated by ME-InAsSb single crystals were reported.…”

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confidence: 99%

Uncooled InAsSb Photoconductors with Long Wavelength

Gao

Gong

et al. 2011

Jpn. J. Appl. Phys.

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High-sensitivity uncooled InAsSb photoconductors with long wavelength were successfully fabricated. The detectors are based on InAsSb epilayers with the thickness of 100 m grown on InAs substrates by melt epitaxy (ME). Si optical lenses were set on the photoconductors without any antireflective coatings. At room temperature, the peak detectivity D Ã p (6.5 m, 1200) reaches 5:3 Â 10 9 cm Hz 1=2 W À1 for InAsSb immersion photoconductors. The detectivity D Ã at the wavelength of 8 m is 1:5 Â 10 8 cm Hz 1=2 W À1 , and that at 9 m is 1:0 Â 10 7 cm Hz 1=2 W À1 . The excellent performance of the detectors indicates the potential applications for infrared (IR) detection and imaging at room temperature.

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“…However, it is difficult to grow very thick epilayers by MBE and MOCVD technologies. In our previous papers, [8][9][10] we proposed the melt epitaxy (ME) method, and successfully grew InAsSb single crystals on InAs substrates with cutoff wavelengths of 8 -12 mm by ME. The thickness of InAsSb epilayers reached 100 mm.…”

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confidence: 99%

High-Sensitivity InAsSb Photoconductors with a Response Wavelength Range of 2–9 µm Operated at Room Temperature

Gao¹,

Gong²,

Fang

et al. 2009

Jpn. J. Appl. Phys.

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InAsSb immersion photoconductors with a response wavelength range of 2 -9 mm operated at room temperature were reported. The detectors are based on InAsSb single crystals grown on InAs substrates by melt epitaxy (ME). Van der Pauw measurements showed that the 300 K electron mobilities of InAsSb materials are higher than 5 Â 10 4 cm 2 V À1 s À1 with carrier densities of ð1{ 3Þ Â 10 16 cm À3 . The photoconductors were measured using a standard blackbody source at a temperature of 500 K and a modulation frequency of 800 Hz under an applied bias current of 10 mA. At 293 K, the blackbody detectivity D bb Ã (500 K, 800) reaches ð2 { 6Þ Â 10 8 cm Hz 1=2 W À1 , indicating the high sensitivity of the detectors and their potential detection applications. #

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The Improvement of Low Temperature Mobility of InAs0.04Sb0.96 Epilayers with Cut Off Wavelength of 12.5 μm by Annealing

Cited by 7 publications

References 6 publications

Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy

Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy

Uncooled InAsSb Photoconductors with Long Wavelength

High-Sensitivity InAsSb Photoconductors with a Response Wavelength Range of 2–9 µm Operated at Room Temperature

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