Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy

Abstract

InAs0.02Sb0.82N0.16 thick epilayers have been grown on InAs substrates by melt epitaxy (ME) technology. Fourier transform infrared (FTIR) transmission spectra showed that the cutoff wavelength of InAs0.02Sb0.82N0.16 samples grown by ME is 10.0 µm indicating the band gap narrowing. The thickness of the epilayers grown by ME observed by scanning electron microscopy (SEM) reaches 183 µm. X-ray diffraction (XRD) measurements confirmed that the epilayers are single crystals. The full-width at half-maximum (FWHM) of InAs0.02Sb0.82N0.16 (400) CuKα1 diffraction peak is 298.8 arcsec. The high quality of the crystals benefits from the thickness of the epilayers exceeding 100 µm, which significantly suppresses the effect of the lattice mismatch between InAs0.02Sb0.82N0.16 epilayers and InAs substrates.Energy dispersive spectrometer (EDS) attached SEM measurements revealed that 16% nitrogen has been incorporated in the epilayers.