Uncooled InAsSb Photoconductors with Long Wavelength

Abstract

High-sensitivity uncooled InAsSb photoconductors with long wavelength were successfully fabricated. The detectors are based on InAsSb epilayers with the thickness of 100 m grown on InAs substrates by melt epitaxy (ME). Si optical lenses were set on the photoconductors without any antireflective coatings. At room temperature, the peak detectivity D Ã p (6.5 m, 1200) reaches 5:3 Â 10 9 cm Hz 1=2 W À1 for InAsSb immersion photoconductors. The detectivity D Ã at the wavelength of 8 m is 1:5 Â 10 8 cm Hz 1=2 W À1 , and that at 9 m is 1:0 Â 10 7 cm Hz 1=2 W À1 . The excellent performance of the detectors indicates the potential applications for infrared (IR) detection and imaging at room temperature.

InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature

“…Among them, InAs 1-x Sb x alloys are promising for their wide bandgap tunability and good uniformity in material growth. InAsSb based MWIR photodetectors have been widely reported, including InAsSb photoconductors [3][4],…”