InAsSb immersion photoconductors with a response wavelength range of 2 -9 mm operated at room temperature were reported. The detectors are based on InAsSb single crystals grown on InAs substrates by melt epitaxy (ME). Van der Pauw measurements showed that the 300 K electron mobilities of InAsSb materials are higher than 5  10 4 cm 2 V À1 s À1 with carrier densities of ð1{ 3Þ Â 10 16 cm À3 . The photoconductors were measured using a standard blackbody source at a temperature of 500 K and a modulation frequency of 800 Hz under an applied bias current of 10 mA. At 293 K, the blackbody detectivity D bb à (500 K, 800) reaches ð2 { 6Þ Â 10 8 cm Hz 1=2 W À1 , indicating the high sensitivity of the detectors and their potential detection applications. #
High-sensitivity uncooled InAsSb photoconductors with long wavelength were successfully fabricated. The detectors are based on InAsSb epilayers with the thickness of 100 m grown on InAs substrates by melt epitaxy (ME). Si optical lenses were set on the photoconductors without any antireflective coatings. At room temperature, the peak detectivity D Ã p (6.5 m, 1200) reaches 5:3 Â 10 9 cm Hz 1=2 W À1 for InAsSb immersion photoconductors. The detectivity D Ã at the wavelength of 8 m is 1:5 Â 10 8 cm Hz 1=2 W À1 , and that at 9 m is 1:0 Â 10 7 cm Hz 1=2 W À1 . The excellent performance of the detectors indicates the potential applications for infrared (IR) detection and imaging at room temperature.
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High sensitivity uncooled InAsSb photoconductors with cutoff wavelengths longer than 8 mm were experimentally validated. The detectors were fabricated using InAs0.052Sb0.948 and InAs0.023Sb0.977 single crystals grown on InAs substrates by melt epitaxy (ME). The thickness of the epilayers was 50 mm. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10 m. Peak detectivity Dλp* (6.5 mm, 1200 Hz) reached 5.4 × 109 cm Hz1/2 W-1 for InAs0.052Sb0.948 immersed detectors. The detectivity D* was 9.3 × 108 and 1.3 × 108 cm Hz1/2 W-1 at the wavelength of 8 and 9 mm respectively. The good performances of InAsSb detectors indicate the possible detection applications
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