Two-photon-absorption-induced nonlinear photoresponse in GaAs∕AlGaAs quantum-well infrared photodetectors

Jiang, Jun; Fu, Yuwei; Li, Ning; Chen, X. S.; Zhen, Honglou; Lü, Wei; Wang, M. K.; Yang, X.; Wu, Guang Hui; Fan, Y.; Li, Y. G.

doi:10.1063/1.1781732

Cited by 4 publications

(1 citation statement)

References 6 publications

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“…Two-photon absorption (TPA) is a third-order nonlinear absorption process which is closely related to the imaginary part of nonlinear susceptibility of the material [1]. Because TPA has different selection rules than one-photon absorption (OPA), it is widely used in the spectroscopy analyzing of semiconductor [2].…”

Section: Introductionmentioning

confidence: 99%

Optical Limiting Using the Two‐Photon Absorption Electrical Modulation Effect in HgCdTe Photodiode

Cui

Yang

Zeng

et al. 2013

The Scientific World Journal

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The electrical modulation properties of the output intensity of two-photon absorption (TPA) pumping were analyzed in this paper. The frequency dispersion dependence of TPA and the electric field dependence of TPA were calculated using Wherrett theory model and Garcia theory model, respectively. Both predicted a dramatic variation of TPA coefficient which was attributed into the increasing of the transition rate. The output intensity of the laser pulse propagation in the pn junction device was calculated by using function-transfer method. It shows that the output intensity increases nonlinearly with increasing intensity of incident light and eventually reaches saturation. The output saturation intensity depends on the electric field strength; the greater the electric field, the smaller the output intensity. Consequently, the clamped saturation intensity can be controlled by the electric field. The prior advantage of electrical modulation is that the TPA can be varied extremely continuously, thus adjusting the output intensity in a wide range. This large change provides a manipulate method to control steady output intensity of TPA by adjusting electric field.

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Section: Introductionmentioning

confidence: 99%

Optical Limiting Using the Two‐Photon Absorption Electrical Modulation Effect in HgCdTe Photodiode

Cui

Yang

Zeng

et al. 2013

The Scientific World Journal

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Two photon absorption in quantum dot-in-a-well infrared photodetectors

Aivaliotis

Zibik

Wilson

et al. 2008

Applied Physics Letters

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Two photon absorption processes in InAs∕In01.5Ga0.85As∕GaAs quantum dot-in-a-well photodetectors are studied using free electron laser excitation. Two photon induced, normal incidence photocurrent, observed in the range of 20–30μm, arises from sequential near-resonant two-step transitions involving electron ground to first excited states in the dot, to quantum well final states. We find a two photon absorption coefficient of β∼1×107cm∕GW at 26.5μm (47meV) and 0.8V applied bias. Second-order autocorrelation measurements exhibit two characteristic time constants of ∼3 and ∼40ps. The latter is associated with the intermediate state electron lifetime, whereas the short decay is explained by the involvement of acoustic phonon assisted transitions.

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Multiple-photon peak generation near the ˜10 μm range in quantum dot infrared photodetectors

Degani

Maialle

Farinas

et al. 2011

Journal of Applied Physics

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We present results from simulations of the photocurrent observed in recently fabricated InAs quantum dot infrared photodetectors that respond with strong resonance peaks in the $10 lm wavelength range. The results are in good agreement with experimental data generated earlier. Multiphoton scattering of electrons localized in the quantum dots are not only in accordance with the observed patterns, but are also necessary to explain the photocurrent spectrum obtained in the calculations. V

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Two-photon-absorption-induced nonlinear photoresponse in GaAs∕AlGaAs quantum-well infrared photodetectors

Abstract: Articles you may be interested inInfrared photocurrent with one-and two-photon absorptions in a double-barrier quantum well system Current-voltage analysis of a tunneling emitter-undoped single quantum well infrared photodetector

Cited by 4 publications

References 6 publications

Optical Limiting Using the Two‐Photon Absorption Electrical Modulation Effect in HgCdTe Photodiode

Optical Limiting Using the Two‐Photon Absorption Electrical Modulation Effect in HgCdTe Photodiode

Two photon absorption in quantum dot-in-a-well infrared photodetectors

Multiple-photon peak generation near the ˜10 μm range in quantum dot infrared photodetectors

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