High-Sensitivity InAsSb Photoconductors with a Response Wavelength Range of 2–9 µm Operated at Room Temperature

Abstract

InAsSb immersion photoconductors with a response wavelength range of 2 -9 mm operated at room temperature were reported. The detectors are based on InAsSb single crystals grown on InAs substrates by melt epitaxy (ME). Van der Pauw measurements showed that the 300 K electron mobilities of InAsSb materials are higher than 5  10 4 cm 2 V À1 s À1 with carrier densities of ð1{ 3Þ Â 10 16 cm À3 . The photoconductors were measured using a standard blackbody source at a temperature of 500 K and a modulation frequency of 800 Hz under an applied bias current of 10 mA. At 293 K, the blackbody detectivity D bb à (500 K, 800) reaches ð2 { 6Þ Â 10 8 cm Hz 1=2 W À1 , indicating the high sensitivity of the detectors and their potential detection applications. #

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

“…Evidently, no other crystal structures are resolved. The full width at half maximum (FWHM) of the (400) peaks is similar to that of InAs 0.23 Sb 0.77 grown on a GaSb, InAs or InSb substrate [11][12][13]. The peak at a diffraction angle of about 66 • is due to the single-crystal GaAs substrate.…”

“…InAs x Sb 1−x ternary alloys have received increasing attention due to important applications, such as InAs x Sb 1−x infrared photodetectors operating at room temperature [11,12]. These alloys typically also exhibit small compositional variations and thus small bandgap changes over large device areas.…”

Uncooled InAsSb Photoconductors with Long Wavelength

“…[3][4][5][6][7][8] The thickness of the epilayers reached 100 m. This thickness effectively eliminated the affection of the lattice mismatch, and gave rise to a low dislocation density (the order of 10 4 cm À2 ) in the epilayers. In our previous paper, 8) immersion photoconductors with a response wavelength range of 2-9 m fabricated by ME-InAsSb single crystals were reported. At 293 K, the blackbody responsivity R bb reached 28-168 V/W, and the blackbody detectivity D Ã bb (500 K, 800) was ð2{6Þ Â 10 8 cm Hz 1=2 W À1 for the photoconductors.…”

“…We have grown thick InAsSb epilayers on InAs substrates with cutoff wavelengths of 8-12 m by melt epitaxy (ME). [3][4][5][6][7][8] The thickness of the epilayers reached 100 m. This thickness effectively eliminated the affection of the lattice mismatch, and gave rise to a low dislocation density (the order of 10 4 cm À2 ) in the epilayers. In our previous paper, 8) immersion photoconductors with a response wavelength range of 2-9 m fabricated by ME-InAsSb single crystals were reported.…”

Mid-wavelength infrared photodetection and surface plasmon enhancement

“…InAsSb has received extensive attention [38], [39], [41], [42]. μm has also been reported at room temperature [147].…”