Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/InxGa1−xAs/GaAs dot-in-well structures

Dixit, V. K.; Khamari, Shailesh K.; Tyagi, Chetna; Singh, S. D.; Porwal, S.; Kumar, Ravi; Mukherjee, C.; Mondal, Puspen; Srivastava, Arvind K.; Sharma, T. K.; Oak, S. M.

doi:10.1088/0022-3727/45/36/365104

Cited by 6 publications

(5 citation statements)

References 46 publications

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“…This iterative loop continues until the program converge. The interplay between the electron kinetics and the electrostatic potential is generally described in terms of quantum-electrostatic problem [26][27][28][29]. The solution to this quantum-electrostatic problem involves the self-consistent set of three equations: Poisson, Schrödinger, and the density equations as follows [29]; ).…”

Section: Resultsmentioning

confidence: 99%

“…The FKOs are originated due to the change in dielectric constant values, which induces by the built-in electric field and the modulated laser light [32]. Therefore, the period of FKOs is directly related to the electric field (E) present in the structures as given below [27], Here ε m and ε g are the energies related to the mth extremum of FKOs and band gap respectively. The ℏθ is the electro-optic energy related to electric field (E) as (ℏθ)…”

Section: Resultsmentioning

confidence: 99%

“…Thereafter, the electron density distribution is obtained from the preestimated energy eigen values and wave functions for the given Fermi distribution [f(ε)]. A similar algorithm based on finite difference approach is used to investigate the carrier redistribution processes in quantum structures have been reported in literature reports[26][27][28][29][30][31]. Figures3(a) and (b) illustrate the conduction band profile along with the electron distribution in S1/S2 and S3 respectively.…”

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confidence: 99%

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Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

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The impact of interface defect states on the recombination and transport properties of charges in asymmetric modulation-doped InGaAs/GaAs quantum wells is investigated. Three sets of high-mobility InGaAs quantum well structures are systematically designed and grown by the metal-organic vapor phase epitaxy technique to probe the effect of carrier localization on the electro-optical processes. In these structures, a built-in electric field drifts electrons and holes towards the opposite hetero-junctions of the quantum well, where their capture/recapture processes are assessed by temperature-dependent photoreflectance, photoluminescence, and photoconductivity measurements. The strength of the electric field in the structures is estimated from the Franz Keldysh oscillations observed in the photoreflectance spectra. The effects of the charge carrier localization at the interfaces lead to a reduction of the net electric field at a low temperature. Given this, the magnetic field is used to re-distribute the charge carriers and help in suppressing the effect of interface defect states, which results in a simultaneous increase in luminescence and photoconductivity signals. The in-plane confinement of charge carriers in quantum well by the applied magnetic field is therefore used to compensate the localization effects caused due to the built-in electric field. Subsequently, it is proposed that under the presence of large interface defect states, a magnetic field-driven Diamagnetic-Landau shift can be used to estimate the fundamental parameters of charge carriers from the magneto-photoconductivity spectra instead of magneto-photoluminescence spectra. The present investigation would be beneficial for the development of high mobility optoelectronic and spin photonic devices in the field of nano-technology.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Vashisht¹,

Porwal²,

Haldar³

et al. 2022

J. Phys. D: Appl. Phys.

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“…However, to enhance the intraband absorption, the materials are often heavily doped to populate sufficient carriers into the energy band involved in transition . Intraband absorption constitutes the basis of photodetectors based on epitaxial quantum wells (QW) and dots (QD) of GaAs/AlGaAs, InAs/AlGaAs, etc . In these quantized systems, the electron energy levels in well or dot layer become discrete.…”

Section: Principles and Materials For Infrared Photodetectionmentioning

confidence: 99%

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

Zhuge

Zheng

Luo

et al. 2017

Adv Materials Technologies

102

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Infrared photodetectors are finding widespread applications in telecommunication, motion detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The nanostructured materials and architectures are attracting extensive interests in photodetectors in view of the potential benefits from confined light‐matter interaction, fast carrier dynamics and ultrahigh photoconductive gains. This review concentrates on the photodetection in the infrared spectrum and recent progresses in constructing advanced infrared photodetectors based on quantum wells, dots, and the rapidly evolving 1D and 2D materials are summarized. The recent achievements in exploring nanostructured plasmonic metamaterials for the intriguing subwavelength photon confinement and waveguides in devices are also surveyed considering their importance in device integration. An outlook of infrared photodetection is given in the end as a guideline for this vigorous field.

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“…To date, these methods have been successfully applied to characterize a number of low-dimensional systems and nanostructures. [8][9][10][11][12][13][14][15][16][17] But despite the previous extensive studies of quantum heterostructures, the temperature-dependent modulated reflectance spectra of multi-layer DWELL photodetector structures with doped QDs have yet to be investigated extensively, and further work is still needed to clarify the underlying mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

Nedzinskas

Čechavičius

Rimkus

et al. 2015

Journal of Applied Physics

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We present a photoreflectance (PR) study of multi-layer InAs quantum dot (QD) photodetector structures, incorporating InGaAs overgrown layers and positioned asymmetrically within GaAs/AlAs quantum wells (QWs). The influence of the back-surface reflections on the QD PR spectra is explained and a temperature-dependent photomodulation mechanism is discussed. The optical interband transitions originating from the QD/QW ground-and excited-states are revealed and their temperature behaviour in the range of 3-300 K is established. In particular, we estimated the activation energy ($320 meV) of exciton thermal escape from QD to QW bound-states at high temperatures. Furthermore, from the obtained Varshni parameters, a strain-driven partial decomposition of the InGaAs cap layer is determined. V C 2015 AIP Publishing LLC.

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Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/In_xGa_1−xAs/GaAs dot-in-well structures

Cited by 6 publications

References 46 publications

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

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