The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (100) GaAs

InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

“…7,23 It is attributed to the higher growth rate of the relaxed islands as compared to that of the strained pseudomorphic islands. 8 To establish a criterion to compare size uniformity of different samples, a homogeneity parameter is defined as the ratio between the density of one group of QDs and the total QD density. The total QD density typically decreases as the growth temperature increases, as shown in Fig.…”

“…6 A higher surface diffusion in MOVPE, compared to MBE, induces a faster QD formation that can lead to island coalescence, and a bimodal QD size distribution. 7,8 Stacked layers have been employed in optoelectronic applications in order to enhance the three-dimensional confinement effects. However, strain accumulation must be considered and preferably minimized to prevent plastic deformation and consequent surface roughness, which can affect the formation of QDs and deteriorate the optical properties.…”

Electrical characterization of thin InAs films grown on patterned W∕GaAs substrates

“…5 In order to reduce size nonuniformity and increase the SK island density, a lower deposition temperature of 500°C was selected. 6,7 Here, the choice of temperature was crucial, as we found that the use of higher growth temperatures resulted in a rougher surface for the overgrown layer. At the new growth conditions we observed that the deposited InAs ͑about 70-90 nm thickness͒ resulted in a flat ͑001͒ top surface grown in between lines oriented along the ͓011͔ direction, as shown in Fig.…”

High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

“…Substrate orientation and growth parameters were found to change the energy of surface reconstructions, the kinetics of adsorption, migration and desorption of adatoms [8][9][10][11][12]. Indeed, growth at lower temperatures or under low V/III ratio eliminated the multiple tilting of InAs crystal planes giving rise to InAs films aligned with their substrates [13]. Many studies using misoriented GaAs substrates were also carried out to evaluate the microstructure and development of defects in epitaxial InAs films [14][15][16].…”