We have investigated the effect of thermal annealing on GaAs 0.963 Bi 0.037 layers grown by atmospheric pressure metalorganic vapour phase epitaxy. High resolution x-ray diffraction (HRXRD) patterns show high crystalline quality and remarkable stability against thermal annealing up to 700 • C. When the annealing temperature reaches 750 • C, the GaAs 0.963 Bi 0.037 alloy is no longer stable, and the HRXRD pattern reveals the presence of other peaks. Atomic force microscopy images show a surface accumulation of Bi islands which disappear at 750 • C. The photoluminescence (PL) is clearly improved after annealing, but no shift of the PL peak was observed. The optimal annealing temperature is found to be ∼700 • C.
Recently a lot of multimedia applications are emerging on portable appliances. They require both the flexibility of upgradeable devices (traditionally software based) and a powerful computing engine (typically hardware). In this context, programmable HW and dynamic reconfiguration allow novel approaches to the migration of algorithms from SW to HW. Thus, in the frame of the Symbad project, we propose an industrial design flow for reconfigurable SoC's. The goal of Symbad consists of developing a system level design platform for hardware and software SoC systems including formal and semi-formal verification techniques.
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