AP-MOVPE of thin GaAs1−xBix alloys

Fitouri, H.; Moussa, I.; Rebey, A.; Fouzri, A.; Jani, B. El

doi:10.1016/j.jcrysgro.2006.06.052

Cited by 46 publications

(42 citation statements)

References 13 publications

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“…This fact may be responsible of the XRD pendellösung fringes vanishing, and it was clearly seen when growing GaAsBi under optimized conditions [1,2]. Some caution is required when interpreting X-ray profile of GaAsBi layers.…”

Section: X-ray Scattering 170mentioning

confidence: 99%

“…All layers investigated in this work are elaborated by metal organic vapour phase epitaxy (MOVPE) technique [1][2][3][4][5][6][7][8].…”

Section: Experimental Details and Theory Elementmentioning

confidence: 99%

“…The interesting properties of III-V-Bi alloy offer a great opportunity for possible design in optoelectronic application devices. Recent results from various groups demonstrated that GaAs 1-x Bi x thin films can be produced by molecular beam epitaxy (MBE) [23][24][25] or by MOVPE [1,2,[26][27][28]. Further, GaAs 1-x Bi x alloy presents temperature insensitivity of band gap required in the resolution of problems of the lasing wavelength fluctuations.…”

Section: Gaasbi Alloy As a New Materialsmentioning

confidence: 99%

“…The optimization of GaAsBi MOVPE growth conditions was detailed in our previous works [1,2]. A good crystalline quality was obtained using a V/III ratio of about 9.5, trimethylbismuth (TMBi) flow of 0.2 µmol min -1 and a growth temperature of 420 C. The measured Bi content value is around 3.7%.…”

Section: X-ray Scattering 170mentioning

confidence: 99%

“…More calculations details of Bi content are reported in the following Ref. [1]. We have also investigated the structural properties of the annealed layer at 750 C using HRXRD.…”

Section: X-ray Scattering 170mentioning

confidence: 99%

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High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

Fitouri¹,

Habchi²,

Rebey³

2017

X-Ray Scattering

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In this chapter, we will address the structural characterization of III-V semiconductor thin films by means of HRXRD. We first give an overview on the basic experimental apparatus and theory element of this method. Subsequently, we treat several examples in order to determine the effect of doping, composition and strain on structural properties of crystal. Analysed layers were grown by metal organic vapour phase epitaxy (MOVPE). Films treated as examples are selected in order to bring the utility of characterization technique. Here, we investigate GaAs/GaAs(001), GaAs:C/GaAs(001), GaN/Si(1 11), GaN:Si/Al 2 O 3 (001), GaAsBi/GaAs(001) and InGaAs/GaAs(001) heterostructures by using different scans for studying numerous structural layers and substrate parameters. Different scan geometries, such as ω-scan, ω/2θ-scan and map cartography, are manipulated to determine tilt, deformation and dislocation density induced by mismatch between layer and substrate. This mismatch is originated from the difference between the chemical properties of two materials generated by doping or alloying. Such HRXRD measurements are explored through the angular spacing between peaks of the substrate and layer. The half of full width maximum (HFWM) of peak layer intensity is a crucial qualitative parameter giving information on defect density in the layer.

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Section: X-ray Scattering 170mentioning

confidence: 99%

“…All layers investigated in this work are elaborated by metal organic vapour phase epitaxy (MOVPE) technique [1][2][3][4][5][6][7][8].…”

Section: Experimental Details and Theory Elementmentioning

confidence: 99%

Section: Gaasbi Alloy As a New Materialsmentioning

confidence: 99%

Section: X-ray Scattering 170mentioning

confidence: 99%

“…More calculations details of Bi content are reported in the following Ref. [1]. We have also investigated the structural properties of the annealed layer at 750 C using HRXRD.…”

Section: X-ray Scattering 170mentioning

confidence: 99%

See 3 more Smart Citations

High‐Resolution X‐Ray Diffraction of III–V Semiconductor Thin Films

Fitouri¹,

Habchi²,

Rebey³

2017

X-Ray Scattering

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MOCVD synthesis of compositionally tuned topological insulator nanowires

Alegria

Yao

Petta

2014

Physica Rapid Research Ltrs

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Device applications involving topological insulators (TIs) will require the development of scalable methods for fabricating TI samples with sub-micron dimensions, high quality surfaces, and controlled compositions. Here we use Bi-, Se-, and Te-bearing metalorganic precursors to synthesize TIs in the form of nanowires. Single crystal nanowires can be grown with compositions ranging from Bi2Se3 to Bi2Te3, including the ternary compound Bi2Te2Se. These high quality nanostructured TI compounds are suitable platforms for on-going searches for Majorana Fermions

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