Electrical characterization of thin InAs films grown on patterned W∕GaAs substrates

Abstract

InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/ GaAs structure. A lower resistance ͑factor of 2͒ was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/ GaAs system.

High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach

“…Since the challenges are growth-based, investigation into planar coalescence focuses entirely around the methodologies of a specific crystal growth technique. Planar coalescence for conventional III–V crystal growth over dielectric microstructures has been achieved for homoepitaxial liquid phase epitaxy (LPE) and metal–organic vapor phase epitaxy (MOVPE) − in both homoepitaxial and metamorphic systems in large part due to liquid and/or gas phase precursors forming limited III–V polycrystalline nuclei on inert dielectric surfaces.…”