The characterization of etched GaAs surface with HCl or H3PO4 solutions

Kang, Min Gu; Cha, Seung Hoon; Park, Hyung Ho; Suh, Kyung Soo; Oh, Kyoung-Hwan

doi:10.1016/s0040-6090(97)00485-9

Cited by 28 publications

(13 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Indeed, the bath composition plays also a rule in GaAs etching rate. A XPS study, proposed by Kang et al 31 confirms our analysis, by showing the presence of specific bonds like Ga-PO 4 and As-PO 4 during an etching in a H 3 PO 4 bath and Ga-Cl bonds during a hydrochloric acid etching.…”

Section: Influence Of Etching Bath Compositionsupporting

confidence: 89%

Micro Structuration of GaAs Surface by Wet Etching: Towards a Specific Surface Behavior

Bienaime

Élie-Caille

Leblois

2012

j nanosci nanotechnol

View full text Add to dashboard Cite

Resonant microelectromechanical systems are promising devices for real time and highly sensitive measurements. The sensitivity of such sensors to additional mass loadings which can be increased thanks to the miniaturisation of devices is of prime importance for biological applications. The miniaturisation of structures passes through a photolithographic process and wet chemical etching. So, this paper presents new results on the anisotropic chemical etching of the gallium arsenide (GaAs) crystal used for this application, in several solutions. This paper focuses on the micro/nanostructuration of the sensing surface to increase the sensor sensitivity. Indeed, this active surface will be biofunctionalized to operate in biological liquid media in view of biomolecules detection. Several experimental conditions of etching bath composition, concentration and temperature were examined to obtain a large variety of geometrical surfaces topographies and roughness. According to the orientation dependence of the chemical etching process, the experiments were also performed on various GaAs crystal plates. The bath 1 H3PO4:9 H2O2:1 H2O appeared to be particularly adapted to the fabrication of the GaAs microstructured membrane: indeed, the bath is highly stable, anisotropic, and, as a function of temperature, it allows the production of a large variety of GaAs surface topographies.

show abstract

Section: Influence Of Etching Bath Compositionsupporting

confidence: 89%

Micro Structuration of GaAs Surface by Wet Etching: Towards a Specific Surface Behavior

Bienaime

Élie-Caille

Leblois

2012

j nanosci nanotechnol

View full text Add to dashboard Cite

show abstract

“…GaAs substrate has a complex surface chemical bond state before wet cleaning treatment. Ga-As, Ga-O and Ga-Ga bond can be find in the XPS spectra of Ga, and As-Ga, As-O and As-As bond also can be found in the XPS spectra of As [17]. As shown in Figs.…”

Section: Resultsmentioning

confidence: 58%

Growth of ZnO(002) and ZnO(100) films on GaAs substrates by MOCVD

Cui

Zhang

et al. 2005

Journal of Crystal Growth

View full text Add to dashboard Cite

“…In comparison with the HCl treatment, the buffered HF solution appears to produce a surface not as readily wet by Au under the experimental conditions studied, so more discrete and isolated islands are formed. Differences due to surface passivation with the consequent H [21] or Cl surface termination [22,23] resulting from the chemical treatments A or B, respectively, could be at the origin of this behavior.…”

Section: Discussionmentioning

confidence: 99%