2012
DOI: 10.1166/jnn.2012.4557
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Micro Structuration of GaAs Surface by Wet Etching: Towards a Specific Surface Behavior

Abstract: Resonant microelectromechanical systems are promising devices for real time and highly sensitive measurements. The sensitivity of such sensors to additional mass loadings which can be increased thanks to the miniaturisation of devices is of prime importance for biological applications. The miniaturisation of structures passes through a photolithographic process and wet chemical etching. So, this paper presents new results on the anisotropic chemical etching of the gallium arsenide (GaAs) crystal used for this … Show more

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Cited by 17 publications
(19 citation statements)
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“…The 625 ±25 m thick GaAs wafer was consequently etched to reach a membrane thickness which is comprised between 50 to 100 m. In order to obtain a flat and undamaged surface, an anisotropic wet etching was done by using orthophosphoric acid based solution. This solution provides smooth surfaces [19], [25] and gives a good control of etch depths at the level of tens angstroms [24]. According to previous studies in our group where several mixtures were tested [19], 1 H 3 PO 4 : 9 H 2 O 2 : 1 H 2 O solution at 0°C seems to give very smooth and flat membranes even for long etching process (etch rate : 0.95 m.min -1 ).…”
Section: Process Of Fabricationmentioning
confidence: 86%
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“…The 625 ±25 m thick GaAs wafer was consequently etched to reach a membrane thickness which is comprised between 50 to 100 m. In order to obtain a flat and undamaged surface, an anisotropic wet etching was done by using orthophosphoric acid based solution. This solution provides smooth surfaces [19], [25] and gives a good control of etch depths at the level of tens angstroms [24]. According to previous studies in our group where several mixtures were tested [19], 1 H 3 PO 4 : 9 H 2 O 2 : 1 H 2 O solution at 0°C seems to give very smooth and flat membranes even for long etching process (etch rate : 0.95 m.min -1 ).…”
Section: Process Of Fabricationmentioning
confidence: 86%
“…This solution provides smooth surfaces [19], [25] and gives a good control of etch depths at the level of tens angstroms [24]. According to previous studies in our group where several mixtures were tested [19], 1 H 3 PO 4 : 9 H 2 O 2 : 1 H 2 O solution at 0°C seems to give very smooth and flat membranes even for long etching process (etch rate : 0.95 m.min -1 ). Acid solution was stirred during the process with a magnetic stirrer at 200 rpm to get an uniform etching on the whole wafer.…”
Section: Process Of Fabricationmentioning
confidence: 86%
See 1 more Smart Citation
“…The etching solutions are composed of an oxidant, an acidic or a basic solution and sometimes a diluent solution. By a variation in composition and concentration of the etching bath, we are able to obtain a large panel of etching rates and patterned surfaces, as already published [26]. The fabrication requirements for the wafer thinning and the membrane microfabrication are not the same.…”
Section: Wet Etching Surfacesmentioning
confidence: 94%
“…This original design, presenting the electronic part separated from the biological interaction reactor, makes it possible to detect a very low mass variation of captured peptides on the surface [3]. This promising sensor structure is obtained using wet etching, which is a low-cost and reproducible process that gives a specific behavior to the surface [4] thanks to adapted microstructuration. Moreover, without the requirement of an added layer [5,6], direct protein grafting is possible through a specific interaction between crystalline facets and specific amino-acid sequences [7,8,9,10,11,12], or genetically engineered proteins [13].…”
Section: Introductionmentioning
confidence: 99%