n-ZnO/p-Si hetero-junction light emitting diodes were fabricated using a metal organic chemical vapour deposition (MOCVD) technique. Room temperature (RT) photoluminescence (PL) spectrum showed an intense main peak at 377 nm and a weak deep-level emission. The I–V characteristics of the n-ZnO/p-Si hetero-junction showed rectifying diode behaviour at different temperatures. At a low bias voltage, typical values of the ideality factors were determined to be 2.84 at 77 K and 1.94 at 300 K, indicating that the junction had good diode characteristics. RT electroluminescence (EL) was detected under forward bias, which covered a broad visible range (400–600 nm) corresponding to defect-related emission. The remarkable difference between the PL and EL spectra was ascribed to their different excitation and recombination processes. Infrared EL emission at Si band gap energy based on the n-ZnO/p-Si hetero-junction structure was also detected.
The light-emitting diode of p-ZnO∕n-GaAs heterojunction was grown by metal-organic chemical vapor deposition. The p-ZnO films have been formed by the doping As atoms which diffuse into ZnO film from GaAs substrate. The p-type behavior of As-doped ZnO films based on As-doped p-ZnO∕n-GaAs, p-ZnO∕p-GaAs heterojunction was studied by carrying out I-V measurements and x-ray photoelectron spectroscopy. The I-V characteristic of p-ZnO∕n-GaAs heterojunction showed characteristic of rectifying diode and visual-infrared electroluminescence emission under forward current injection at room temperature. The I-V of the heterounction had a threshold voltage of ∼2.5V.
Undoped n-ZnO thin films were successfully grown on p-Si (1 0 0) substrates by low-pressure metalorganic chemical vapour deposition (MOCVD). The c-axis oriented ZnO films were grown on Si at different temperatures using diethylzinc (DEZn) and oxygen (O 2 ). The structural and optical properties of ZnO films were investigated using x-ray diffraction (XRD) and photoluminescence (PL) spectra, respectively. It is found that the ZnO film grown at 610 • C shows the best crystallinity and optical quality. Current-voltage (I -V ) characteristics of all n-ZnO/p-Si heterojunctions exhibit nonlinear and rectifying characteristics with a small current leakage in the reverse direction. Junction leakage of the heterojunction deposited at 620 • C is higher than those of the other heterojunctions.
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