The application of secondary effects in high aspect ratio dry etching for the fabrication of MEMS

Volland, Burkhard E.; Heerlein, H.; Kostič, I.; Rangelow, Ivo W.

doi:10.1016/s0167-9317(01)00496-8

Cited by 27 publications

(14 citation statements)

References 8 publications

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“…The development of high throughput methodologies (HTMs) for the exploration of new electronic materials [18,19] as well as optimizing semiconducting manufacturing processes such as chemical mechanical planarization (CMP) [20] and aspect ratio dependent etching (ARDE) [21,22] are becoming routine tools for materials scientists and process engineers.…”

Section: Introductionmentioning

confidence: 99%

Combinatorial chips for optimizing the growth and integration of carbon nanofibre based devices

Cassell¹,

Qi²,

Cruden³

et al. 2003

Nanotechnology

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The growth of carbon nanofibres (CNF) by plasma enhanced chemical vapour deposition (PECVD) and the integration of CNFs into devices are studied using high throughput methodology. A growth compatibility chip containing candidate metal contact underlayers and transition metal catalyst layers are used to explore growth activity from various pairings of these two layers. In addition, catalyst density microarray chips (CDMCs) where each chip consists of catalyst patterns with various feature sizes and densities were used to investigate CNF growth and integration. The CDMCs were used to efficiently explore CNF growth conditions as well as subsequent downstream integration and testing for applications in ultrasensitive biosensing and field emission. The methodology described here is widely applicable as a general approach for optimizing the bottom-up growth and integration of nanostructures.

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Section: Introductionmentioning

confidence: 99%

Combinatorial chips for optimizing the growth and integration of carbon nanofibre based devices

Cassell¹,

Qi²,

Cruden³

et al. 2003

Nanotechnology

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“…The fabrication sequence is a combination of modified SCREAM and LIRIE process [3][4][5][6][7]. The structures are transferred into an oxide layer (1.2 lm) on top of the wafer by contact print lithography and RIE.…”

Section: Fabricationmentioning

confidence: 99%

Thermally driven microgripper as a tool for micro assembly

Ivanova

Ivanov

Ali

et al. 2006

Microelectronic Engineering

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“…Sacrificial structures in the shape of, e.g., waffles with narrow segments are undercut and may be removed mechanically 22 or by plasma etching. 23 Using single crystalline wafers, the sidewalls of structures may be temporarily protected by thermal oxidation 24 or reinforced passivation using C 4 F 8 , 25 followed by anisotropic etching of the bottom protection and isotropic under-etching of sacrificial silicon. If mechanical removal is impermissible, wide structures may be isotropically etched subsequent to the etching of narrow structures, employing an additional lithography step and a separate masking layer.…”

Section: Introductionmentioning

confidence: 99%

Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

Stöhr

Michael-Lindhard

Hübner

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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O. (2015). Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 33(6), [062001]. DOI: 10.1116/1.4931622 Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses This article describes the realization of complex high-aspect ratio silicon structures with feature dimensions from 100 lm to 100 nm by deep reactive ion etching using the Bosch process. As the exact shape of the sidewall profiles can be crucial for the proper functioning of a device, the authors investigated how sacrificial structures in the form of guarding walls and pillars may be utilized to facilitate accurate control of the etch profile. Unlike other sacrificial structuring approaches, no silicon-on-insulator substrates or multiple lithography steps are required. In addition, the safe removal of the sacrificial structures was accomplished by thermal oxidation and subsequent selective wet etching. The effects of the dimensions and relative placement of sacrificial walls and pillars on the etching result were determined through systematic experiments. The authors applied this process for exact sidewall control in the manufacture of x-ray lenses that are very sensitive to sidewall shape nonuniformities. Compound kinoform lenses for focusing hard x-rays with structure heights of 200 lm were manufactured, and the lenses were tested in terms of their focusing ability and refracting qualities using synchrotron radiation at a photon energy of 17 keV. A 180 lm long line focus with a waist of 430 nm at a focal length of 215 mm was obtained.

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The application of secondary effects in high aspect ratio dry etching for the fabrication of MEMS

Cited by 27 publications

References 8 publications

Combinatorial chips for optimizing the growth and integration of carbon nanofibre based devices

Combinatorial chips for optimizing the growth and integration of carbon nanofibre based devices

Thermally driven microgripper as a tool for micro assembly

Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

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