The &amp;#x2018;permanent&amp;#x2019; component of NBTI: Composition and annealing

Aichinger, Thomas; Pobegen, Gregor; Reisinger, H.; Wagner, P.-J.; Franco, J.; Nelhiebel, Michael; Kaczer, B.

doi:10.1109/irps.2011.5784543

Cited by 58 publications

(47 citation statements)

References 39 publications

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“…As reported in [20] from large-signal voltage sweep characteristics indicated (not shown here), trap recovery can occur during the application of typical CP pulses, and the CP current has been shown decreasing with time. Therefore, since trap recovery phenomena are not considered in the proposed implementation of the model, the results illustrated in this paper could be considered as an effective averaged response of the defects for the totality of the applied CP pulses.…”

Section: A Calibration Methodologysupporting

confidence: 74%

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Garetto

Randriamihaja

Rideau

et al. 2012

IEEE Trans. Electron Devices

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Abstract-Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-ofequilibrium quasi-Fermi levels in proximity of the Si/SiO 2 interface has been studied in detail.

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Section: A Calibration Methodologysupporting

confidence: 74%

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Garetto

Randriamihaja

Rideau

et al. 2012

IEEE Trans. Electron Devices

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“…We cannot precisely measure it since ANET does not discharge even under Vg= -2 V for 1000 sec. For NBTI, the term permanent component was used [22,23]. This can be misleading, since they are not really permanent and can be neutralized by raising temperature [22,24].…”

Section: A Types Of Electron Traps Under Pbtimentioning

confidence: 99%

Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

Duan

Zhang

et al. 2016

IEEE Trans. Electron Devices

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Abstract-The access transistor of SRAM can suffer both Positive Bias Temperature Instability (PBTI) and Hot Carrier Aging (HCA) during operation. The understanding of electron traps (ETs) is still incomplete and there is little information on their similarity and differences under these two stress modes. The key objective of this paper is to investigate ETs in terms of energy distribution, charging and discharging properties, and generation. We found that both PBTI and HCA can charge ETs which center at 1.4eV below conduction band (Ec) of high-k (HK) dielectric, agreeing with theoretical calculation. For the first time, clear evidences are presented that HCA generates new ETs, which do not exist when stressed by PBTI. When charged, the generated ETs' peak is 0.2eV deeper than that of pre-existing ETs. In contrast with the power law kinetics for charging the pre-existing ETs, filling the generated ETs saturates in seconds, even under an operation bias of 0.9 V. ET generation shortens device lifetime and must be included in modelling HCA. A cyclic and anti-neutralization ETs model (CAM) is proposed to explain PBTI and HCA degradation, which consists of pre-existing cyclic electron traps (PCET), generated cyclic electron traps (GCET), and anti-neutralization electron traps (ANET).

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“…In order to attempt a separation of R and P, the AC stress is performed with different AC-off voltages, since it has been shown that R recovers much quicker under positive bias [24,[36][37][38][39]. Indeed, as shown in Fig.…”

Section: Frequency Dependencementioning

confidence: 99%

On the frequency dependence of the bias temperature instability

Kaczer

Reisinger

Wagner

et al. 2012

2012 IEEE International Reliability Physics Symposium (IRPS)

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Abstract-An accurate understanding of the duty-factor and frequency dependence of the bias temperature instability (BTI) is essential since it can transfer to significant lifetime benefits. Contradictory reports regarding the frequency dependence have been published in literature, with particularly older studies and those interpreted in the framework of the reaction-diffusion model claiming BTI to be frequency-independent. Newer studies, on the other hand, clearly show a frequency-dependent component of BTI. Here we discuss this frequency dependence using the recently suggested capture/emission time map model, which explains BTI as a collection of a large number of independent first-order reactions of defects with two states. While this model can explain most features observed in DC and low-frequency AC stress experiments, it does not fully capture the experimentally observed frequency and duty-factor dependence. However, when a more accurate defect model is considered, which describes charging of the defect via an intermediate state, good accuracy with experimental data is obtained.

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The ‘permanent’ component of NBTI: Composition and annealing

Cited by 58 publications

References 39 publications

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging

On the frequency dependence of the bias temperature instability

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