Texture and stress profile in thick polysilicon films suitable for fabrication of microstructures

Furtsch, M.; Offenberg, M.; Vilà, A.; Cornet, A.; Morante, J.R.

doi:10.1016/s0040-6090(96)09341-8

Cited by 15 publications

(3 citation statements)

References 6 publications

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“…Since the fabrication processes of semiconductors devices often produce strains in some localized microscopic regions, the Raman microprobe was found very useful in analyzing these microdomains. This technique is now recognized as a powerful tool in identifying stress and strain in polycrystalline silicon structures used for the fabrication of large polysilicon micromechanical structures [1][2][3]. These micromechanical systems based on surface-micromachining technologies can have serious stress effects that can cause mechanical device failure, curling or fracture, therefore, the micro-Raman system can be used as a quality control method and to improve several technological parameters.…”

Section: Frequencymentioning

confidence: 99%

Micro-Raman spectroscopy of the solid state: applications to semiconductors and thin films

Jawhari¹

2000

Analusis

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The potential of Raman microspectroscopy as a powerful tool in characterizing solids will be demonstrated here with several applications on semiconductors and thin films. The method not only permits the identification of different localized microscopic regions, with a high spatial resolution and with no sample preparation, but also provides several basic information on the microstructure of solids.

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Section: Frequencymentioning

confidence: 99%

Micro-Raman spectroscopy of the solid state: applications to semiconductors and thin films

Jawhari¹

2000

Analusis

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“…Polysilicon layers with thickness greater than 10 mm have been demonstrated (Furtsch et al 1997). Anisotropic wet bulk micromachining is the most cost-effective process, but it requires protection and etch stop, which greatly restricts its application range.…”

Section: Fabrication Methodsmentioning

confidence: 99%

Accelerometers

Xie

Fedder

Sulouff

2008

Comprehensive Microsystems

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“…In general, the relaxation of stress occurs through structural changes such as dislocation movement, defect diffusion and grain growth. Phosphorus has been known to promote the grain growth of polysilicon by first moving rapidly along grain boundaries and then into the grains, releasing point defects which enhance silicon diffusion and hence grain growth [23]. Dopant atoms in the film also play an important role in the formation of the stress profile, since the dopants in substitutional sites deflect the silicon lattice and change the stress of the doped polysilicon film [24,25].…”

Section: The Effect Of Varying the Deposition Temperature On Implante...mentioning

confidence: 99%

Investigation of the effect of processing steps on stress in a polysilicon structural membrane

Berney¹,

Hill²,

Kelleher³

et al. 2000

J. Micromech. Microeng.

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Stress control in low-pressure chemical vapour deposition (LPCVD) polysilicon is important for micromechanical processes involving surface micromachining. This paper outlines work determining the effect of processing steps on the stress in blanket films of sensor polysilicon after deposition, implant and anneal processing. The measured stress in the blanket films was then correlated with interferometry images of the microfabricated pressure sensor devices after each processing step. There were small reductions in the measured tensile stress, in the blanket films, for a number of deposition steps. However, a reflow of the borophosphosilicate glass (BPSG) interlayer dielectric, at 950 °C, caused the most significant change in stress, resulting in a transition from tensile to compressive for polysilicon deposited at higher temperatures. The layer in contact with the polysilicon during processing influenced the final measured stress in the polysilicon blanket film. For devices with tetraethylorthosilicate oxide (TEOS) in contact with the polysilicon membrane during processing, the blanket film was tensile after sealing and compressive after processing. When the layer in contact with the polysilicon blanket film during processing was LPCVD polysilicon or LPCVD nitride, the final measured stress was tensile. The measured blanket film values corresponded well to the interferometry images of the fabricated pressure sensor devices. For a TEOS layer in contact with the polysilicon membrane during processing, the devices exhibited a deflected, tensile membrane device after sealing and a buckled, compressive polysilicon membrane device after processing. When the layer in contact with the polysilicon membrane during processing was LPCVD polysilicon or LPCVD nitride, the patterned devices were deflected, exhibiting tensile post-sealing characteristics. At the end of processing, these membranes remained deflected.

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Texture and stress profile in thick polysilicon films suitable for fabrication of microstructures

Cited by 15 publications

References 6 publications

Micro-Raman spectroscopy of the solid state: applications to semiconductors and thin films

Micro-Raman spectroscopy of the solid state: applications to semiconductors and thin films

Accelerometers

Investigation of the effect of processing steps on stress in a polysilicon structural membrane

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