2000
DOI: 10.1051/analusis:2000280015
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Micro-Raman spectroscopy of the solid state: applications to semiconductors and thin films

Abstract: The potential of Raman microspectroscopy as a powerful tool in characterizing solids will be demonstrated here with several applications on semiconductors and thin films. The method not only permits the identification of different localized microscopic regions, with a high spatial resolution and with no sample preparation, but also provides several basic information on the microstructure of solids.

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Cited by 41 publications
(25 citation statements)
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“…Therefore, the temperature, density of defects, and residual stress in the layer affect the width of the peak. [32][33][34] In other words, a smaller width corresponds to a higher order and smaller residual stress. The change in the peak width should be accompanied by a shift of the peak position; however, for broad Raman peaks, the peak widths are easier to monitor than the peak position shifts.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the temperature, density of defects, and residual stress in the layer affect the width of the peak. [32][33][34] In other words, a smaller width corresponds to a higher order and smaller residual stress. The change in the peak width should be accompanied by a shift of the peak position; however, for broad Raman peaks, the peak widths are easier to monitor than the peak position shifts.…”
Section: Resultsmentioning
confidence: 99%
“…In the Raman spectra, the band position, intensity and bandwidth are closely related to the order, crystal size and defects in the samples. 121 The band position is sensitive to the presence of stresses or strains: a tensile stress will determine an increase in the lattice spacing and, hence, a decrease in the wavenumber of the vibrational mode. In the case of compressive strain, the decrease of the lattice parameter yields a corresponding increase of the vibrational frequency.…”
Section: Raman Spectroscopymentioning
confidence: 99%
“…The amount of material is directly related to the Raman intensity and a damage in the lattice leads to a decrease in the intensity of modes, related to the breaking of bonds and changes in atomic force displacements. 121 Raman spectroscopy is employed to distinguish different materials and to determine the kinds of species in a same sample. conditions.…”
Section: Raman Spectroscopymentioning
confidence: 99%
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“…This technique was chosen since can provide information about the order, crystal size or defects of samples [24], as explained in Chap. 2.…”
Section: Raman Spectroscopy Of Copc/au Samples Irradiated With X-raysmentioning
confidence: 99%