Terahertz wireless communication using GaAs transistors as detectors

Abstract

The detection of high data-rate wireless communication using a terahertz-frequency carrier, and a GaAs transistor as a detector, is reported. Communications are investigated around 0.2 and 0.3087 THz. For the first time, an error-free transmission at data rates up to 8.2 Gbit/s is demonstrated, using a carrier frequency of 0.3087 THz.Introduction: With the present development of communication technologies, more and more users need solutions to transmit wireless data at very high rates. In this Letter, we are interested in high data-rate transmission in the terahertz (THz) domain. The use of a THz carrier frequency enables data transmission up to 100 Gbit/s [1].Schottky barrier diodes are widely used as detectors for high data-rate communications [1][2][3]. Owing to their high sensitivity (a few of kV/W), they are presently the best available detectors for THz communication. However, these diodes suffer from their high output impedance, thus limiting integration with low-impedance high-bandwidth amplifiers. Moreover, they are not robust to high THz powers, and one has to handle them cautiously as they are very sensitive to electrostatic discharges.To overcome the above drawbacks, we propose the use of pseudomorphic high-electron-mobility GaAs transistors (pHEMT), as recent studies have demonstrated their capabilities to detect THz radiation [4][5][6]. In particular, sine-wave amplitude modulation detection was achieved using a plasma-wave transistor, at modulation frequencies of up to a few GHz, using a 300 GHz carrier frequency [7]. These transistors also have the advantage, among others, of having a low and gate voltage tunable output impedance (from a few Ω to kΩ) if the gate voltage is tuned. Their easy on-chip integration with a monolithic microwave integrated circuit, robustness to high input power and low cost also make them the detectors of choice in communication applications.In this Letter, we propose a strategy to obtain a significant improvement of the transistor performances, in order to detect real data at higher data rates. For this purpose, extra work was conducted on packaging the pHEMT in a home-made horn with a rectangular waveguide. This horn permits us to increase the gathered THz power, thus improving the pHEMT sensitivity by up to a few V/W at 280 GHz ± 30 GHz. The rectangular waveguide was designed in order to ensure a small incoming beam waist at the transistor, and to reduce the detection of undesired noise. This screening is important because the undesired coupled signals/noise might be amplified by the transistor. The transistors are also biased with a gate-source voltage. The choice of voltage is a trade-off between increasing the sensitivity and keeping relatively low output impedance, which is necessary for fast data transfer [6].In this Letter, we first remind the reader of the existing performances and limitations at 0.2 THz [8]. Then, we explain how we exceeded these limitations in order to be able to detect higher data rates, up to 8.2 Gbit/s, by using a 0.3087 THz carrier freque...

Advances in terahertz communications accelerated by photonics

“…Also, plasma-based transistors have been shown to be potential candidates for THz detecton [96][97] , mainly for imaging, but have also been investigated in data communication for 300 GHz short-range links 98 . The main limitation issue of these devices is the output interconnection: as the plasma is enhanced near transistor pinch-off voltage, the channel impedance value is quite high and far from usual wideband amplifier impedances (50 W).…”

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors

“…Wireless high-data-rate error-free communications have been already demonstrated up to 8.3 Gbps using transistors as THz detectors, 5,6 but for high-electron mobility transistors only. As already mentioned, transistors are very attractive for their integration with monolithic high-speed integrated circuits, mainly due to their tunable and low output impedance.…”

“…They are considered as a good candidate for imaging, tomography, spectroscopy, as well as for future high data-rate THz wireless communications. [1][2][3][4][5][6] These applications require high speed and high responsivity detectors, integrated monolithically with antenna and readout electronics.…”

Hybrid Silicon Nanowire Devices and Their Functional Diversity

“…One of the prominent examples is the transistor that has faced a organic (bio) species and nanoscale electronic matter, [14,15] as well as the need for integration and packaging of organic and inorganic subsystems on a single chip to reduce the cost. Indeed, in parallel to the SiNWs, strong efforts are dedicated to the implementation of other materials, e.g., graphene, [21] molybdenum disulfide, [22] carbon nanotubes, [23] and gallium arsenide (GaAs), [24] into transistor structures. Indeed, in parallel to the SiNWs, strong efforts are dedicated to the implementation of other materials, e.g., graphene, [21] molybdenum disulfide, [22] carbon nanotubes, [23] and gallium arsenide (GaAs), [24] into transistor structures.…”