High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors

Abstract

Compact and fast detectors, for imaging and wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz and modulation bandwidth up to a few tens of GHz. This can be obtained only by using a mature technology allowing monolithic integration of detectors with low-noise amplifiers. One of the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz detection by InP double-heterojunction bipolar transistors (DHBTs) operating in a large frequency range (0.25-3.1 THz). The performances of the DHBTs as terahertz sensors for communications were evaluated showing the modulation bandwidth of investigated DHBTs close to 10 GHz.

TCAD Modeling for Si–Ge HBT THz Detectors

“…Plasmonic field effect transistor-based THz (TeraFETs) implemented in In-Ga-As, Ga-As, Ga-N, and Si have demonstrated efficient detection on the basis of the excitation of decayed plasm waves [7][8][9][10][11]. The InP heterojunction bipolar transistors (HBTs) have also demonstrated a reasonable performance in detecting THz radiation [12,13]. Si-Ge HBTs and bipolar (Bi)CMOS circuits, which are compatible with standard very large-scale integration (VLSI) technology, have shown advantages for many applications [14][15][16][17].…”