We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates up to 8.2 Gbps using a 18-GHz-bandwidth GaAs/AlGaAs field-effect transistor as a detector. This result demonstrates that low-cost commercially-available plasma-wave transistors whose cutoff frequency is far below THz frequencies can be employed in THz communication. Wireless communication over 50 cm is presented at 1.4 Gbps using a unitravelling-carrier photodiode as a source. Transistor integration is detailed, as it is essential to avoid any deleterious signals that would prevent successful communication. We observed an improvement of the bit error rate with increasing input THz power, followed by a degradation at high input power. Such a degradation appears at lower powers if the photodiode bias is smaller. Higher-datarate communication is demonstrated using a frequency-multiplied source thanks to higher output power. Bit-error-rate measurements at data rates up to 10 Gbps are performed for different input THz powers. As expected, bit error rates degrade as data rate increases. However, degraded communication is observed at some specific data rates. This effect is probably due to deleterious cavity effects and/or impedance mismatches. Using such a system, realtime uncompressed high-definition video signal is successfully and robustly transmitted.
The detection of high data-rate wireless communication using a terahertz-frequency carrier, and a GaAs transistor as a detector, is reported. Communications are investigated around 0.2 and 0.3087 THz. For the first time, an error-free transmission at data rates up to 8.2 Gbit/s is demonstrated, using a carrier frequency of 0.3087 THz.Introduction: With the present development of communication technologies, more and more users need solutions to transmit wireless data at very high rates. In this Letter, we are interested in high data-rate transmission in the terahertz (THz) domain. The use of a THz carrier frequency enables data transmission up to 100 Gbit/s [1].Schottky barrier diodes are widely used as detectors for high data-rate communications [1][2][3]. Owing to their high sensitivity (a few of kV/W), they are presently the best available detectors for THz communication. However, these diodes suffer from their high output impedance, thus limiting integration with low-impedance high-bandwidth amplifiers. Moreover, they are not robust to high THz powers, and one has to handle them cautiously as they are very sensitive to electrostatic discharges.To overcome the above drawbacks, we propose the use of pseudomorphic high-electron-mobility GaAs transistors (pHEMT), as recent studies have demonstrated their capabilities to detect THz radiation [4][5][6]. In particular, sine-wave amplitude modulation detection was achieved using a plasma-wave transistor, at modulation frequencies of up to a few GHz, using a 300 GHz carrier frequency [7]. These transistors also have the advantage, among others, of having a low and gate voltage tunable output impedance (from a few Ω to kΩ) if the gate voltage is tuned. Their easy on-chip integration with a monolithic microwave integrated circuit, robustness to high input power and low cost also make them the detectors of choice in communication applications.In this Letter, we propose a strategy to obtain a significant improvement of the transistor performances, in order to detect real data at higher data rates. For this purpose, extra work was conducted on packaging the pHEMT in a home-made horn with a rectangular waveguide. This horn permits us to increase the gathered THz power, thus improving the pHEMT sensitivity by up to a few V/W at 280 GHz ± 30 GHz. The rectangular waveguide was designed in order to ensure a small incoming beam waist at the transistor, and to reduce the detection of undesired noise. This screening is important because the undesired coupled signals/noise might be amplified by the transistor. The transistors are also biased with a gate-source voltage. The choice of voltage is a trade-off between increasing the sensitivity and keeping relatively low output impedance, which is necessary for fast data transfer [6].In this Letter, we first remind the reader of the existing performances and limitations at 0.2 THz [8]. Then, we explain how we exceeded these limitations in order to be able to detect higher data rates, up to 8.2 Gbit/s, by using a 0.3087 THz carrier freque...
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.