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The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using Monte Carlo simulations and non linear analysis. Sensitivities up to 100 V/W are obtained at 0.3 THz with a 280 pW/Hz1/2 noise equivalent power.

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Helicity sensitive terahertz radiation detection by field effect transistors We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings, the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state. V C 2015 AIP Publishing LLC. [http://dx.

A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo simulations, an analysis of the static I-V curves and the time-domain evolution of the current obtained when varying some simulation parameters in the diodes has been made. Oscillation frequencies of hundreds of GHz are predicted by the simulations in diodes with micrometric channel lengths. Following simulation guidelines, a first batch of diodes was fabricated. It was found that surface charge depletion effects are stronger than expected and inhibit the onset of the oscillations. Indeed, a simple standard constant surface charge model is not able to reproduce experimental measurements and a self-consistent model must be included in the simulations. Using a self-consistent model it was found that to achieve oscillations wider channels and improved geometries are necessary.

We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production methods.

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The development of components for terahertz wireless communications networks has become an active and growing research field. However, in most cases these components have been studied using a continuous or broadband-pulsed terahertz source, not using a modulated data stream. This limitation may mask important aspects of the performance of the device in a realistic system configuration. We report the characterization of one such device, a frequency multiplexer, using modulated data at rates up to 10 gigabits per second. We also demonstrate simultaneous error-free transmission of two signals at different carrier frequencies, with an aggregate data rate of 50 gigabits per second. We observe that the far-field spatial variation of the bit error rate is different from that of the emitted power, due to a small nonuniformity in the angular detection sensitivity. This is likely to be a common feature of any terahertz communication system in which signals propagate as diffracting beams not omnidirectional broadcasts.