Record high bandwidth integrated graphene photodetectors for communication beyond 180 Gb/s

Schall, Daniel; Pallecchi, Emiliano; Ducournau, Guillaume; Avramovic, Vanessa; Otto, Martin; Neumaier, Daniel

doi:10.1364/ofc.2018.m2i.4

Cited by 34 publications

(46 citation statements)

References 7 publications

(14 reference statements)

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“…It can be seen that a number of results for the realization of high bandwidths of > 40 GHz were reported20-23, 28, 30-31, 33-35 . In particular, in ref 22,. the 3 dB-bandwidth is higher than128 GHz.…”

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confidence: 99%

High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm

et al. 2020

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A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphenemetal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 μm, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S 11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 μm with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 μm. The measured responsivity is about 0.4 A/W under a bias voltage of −0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 μm.

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confidence: 99%

High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm

et al. 2020

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“…This lesson applies equally well to graphene, the two-dimensional allotrope of carbon that moved into the focus of research [1] because of several outstanding intrinsic properties, such as a very high carrier mobility [2], broadband optical absorption covering the far-infrared (IR) to ultra-violet (UV) range [3] or extremely high surface to volume ratio. On a single device level these intrinsic properties have already been utilized for realizing high performing devices, including infrared photodetectors [4,5], Hall-effect magnetic field sensors [6], pressure sensors [7] and gas sensors [8], which all outperform their counterparts based on established semiconductors. Sensing may therefore be a promising application space; yet entry to this market -currently dominated by silicon and silicon MEMS (microelectromechanical systems) technology for magnetic field, pressure or gas sensors in large volume automotive and consumer electronics, and by other more expensive semiconductors like InGaAs for infrared detectors and imaging systems in smaller markets such as scientific instrumentation, security or defence -is still hampered by the lack of a scalable device manufacturing process.…”

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confidence: 99%

Integrating graphene into semiconductor fabrication lines

2019

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Electronic and photonic devices based on the two-dimensional material graphene have unique properties, leading to outstanding performance figures-of-merit. Mastering the integration of this new and unconventional material into an established semiconductor fabrication line represents a critical step for pushing it forward towards commercialization.Silicon has remained the dominating material in microelectronics for more than five decades. Although many semiconductors like Ge, GaAs or InP possess higher charge carrier mobilities, favourable optical properties or other advantages compared to silicon, the simpler production and processing of the latter make it by far the most convenient and cost effective material for large markets.

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“… 13 Fast graphene photodetectors (GPDs) have been demonstrated, 8 , 14 − 19 with bandwidth > 100 GHz. 17 − 19 In terms of speed, such devices can compete with Ge-based PDs. 20 However, these GPDs typically require nanoscale plasmonic structures, using metals not compatible with complementary metal oxide semiconductor (CMOS) integration.…”

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confidence: 99%

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

et al. 2020

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We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p−n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity ∼8 × 10 10 cm −2 at the charge neutrality point, and a large Seebeck coefficient ∼140 μV K −1 , enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.

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Record high bandwidth integrated graphene photodetectors for communication beyond 180 Gb/s

Abstract: We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production methods.

Cited by 34 publications

References 7 publications

High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm

High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm

Integrating graphene into semiconductor fabrication lines

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

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