Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctions

Abstract

High barrier Yb/p-InP metal-insulator-semiconductor (MIS) and metal-semiconductor (MS) junctions were fabricated by evaporation of Yb on InP:Zn substrates. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of these devices were measured over a wide range of temperatures. From the room-temperature forward I-V data, the values of 1.06 and 1.30 for the ideality factor (n) were obtained for the MIS and MS diodes, respectively. The higher value of n was attributed to an order of magnitude higher density of interface states in the MS junction than in the MIS diodes. The I-V/T data over the temperature range 190–400 K, indicated that the forward current transport in the Yb/p-InP MIS junction was controlled by the thermionic-field emission (TFE) mechanism. The analysis of the reverse saturation current I0 in terms of the TFE model provided a value of 1.07±0.03 V for the zero bias, zero temperature barrier height (φ0) which was in close agreement with the value of φ0=1.03±0.04 V, provided by the C-V data. For the MS diode, the temperature dependence of the forward I-V characteristics over the temperature range 250–350 K were well described by the thermionic emission process. However, the value of φ0=0.80±0.04 V, determined from the I-V data was much smaller than the value of φ0=0.96±0.04 V, obtained from the C-V data.

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

“…In an n-type semiconductor, the energy of the interface states with respect to the bottom of the conduction band at the surface of the semiconductor, E ss , is given by [17][18][19][20][21][22][23] …”

Comment on ‘‘Influence of barrier height distribution on the parameters of Schottky diodes’’ [Appl. Phys. Lett. 65, 575 (1994)]

“…͑The usual TD of the IF may be explained with the ''interaction'' of the elementary barriers 5 as well, as with the domination of the current by anomalous thermionic-field emission. 3,6 ͒ The TDs of the ABH evaluated by us, are lower than those obtained by DO. The series resistance and the spreading or homogenization of the current in the bulk of the semiconductor affect the IF very strongly, and must less the ABH.…”

Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

“…InP and related materials have attracted attention in the fabrication of optoelectronic, microwave, and high power and high speed electronic devices, due to their direct band gap, good temperature stability, high frequency response and high electron saturation velocity [1][2][3]. When realizing such devices, metalsemiconductor (MS) and metal-insulator-semiconductor (MIS) type Schottky contacts are frequently used, and it is thus necessary to understand the electrical properties of MS and MIS interfaces in detail.…”