Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Kim, Hogyoung

doi:10.4313/teem.2016.17.5.293

Cited by 17 publications

(4 citation statements)

References 25 publications

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“…For the numerical solution of any problem, it is necessary to have knowledge of initial guesses of desired parameter to avoid the divergence. For this purpose, in this study experimental data has been utilized [26]. All the numerical calculations have been performed by developing the computational algorithms of NR and GS methods in using MATLAB software.…”

Section: Resultsmentioning

confidence: 99%

Numerical analysis of transport properties of ZnO based Schottky diode

Ahmed¹,

Khan²,

Hussain³

2021

Phys. Scr.

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Since numerical methods allow us to generate data faster than experimental methods in less time and with less effort, therefore in the presented work two well-known numerical methods known as Newton-Raphson and Gauss-Seidel were employed to compute electrical parameters of electronic devices at highly sensitive temperature from 300 K to 1000 K to discuss the significance of these parameters on the competency of devices. ZnO based Schottky diode has been considered due to the substantial properties of ZnO which are very crucial in the invention of high-quality devices. The investigations were focused on exploring the consequences of highly sensitive temperature on electrical parameters like ideality factor, saturated current, donor concentration, built in potential and height of barrier of Schottky diode. All parameters were computed by applying Newton-Raphson and Gauss-Seidel method on well-known thermionic emission model and capacitance-voltage equations.

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Section: Resultsmentioning

confidence: 99%

Numerical analysis of transport properties of ZnO based Schottky diode

Ahmed¹,

Khan²,

Hussain³

2021

Phys. Scr.

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“…This case is known as negative capacitance (NC) behavior in the literature and is mainly due to the minority carrier injection and contact injection. [11][12][13][14][15][16] This phenomenon may be also related to an inductive contribution to the impedance from the injection of minority carriers. 12 In addition, the negative capacitance effect is also explained by considering the loss of interface charge in occupied states below Fermi level.…”

Section: Resultsmentioning

confidence: 99%

“…[11][12][13][14][15][16] This phenomenon may be also related to an inductive contribution to the impedance from the injection of minority carriers. 12 In addition, the negative capacitance effect is also explained by considering the loss of interface charge in occupied states below Fermi level. 17 Under forward bias region, the C value increases as the temperature rises.…”

Section: Resultsmentioning

confidence: 99%

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

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Dielectric, conductivity, and modulus properties of a metal oxide semiconductor (MOS) capacitor with zinc oxide (ZnO) interlayer produced via radio-frequency magnetron sputtering were investigated using admittance spectroscopy measurements. Frequency and temperature dependence of the complex dielectric permittivity (*='-i''), dielectric loss factor (tan ), ac conductivity (ac), and complex electric modulus (M*=M'+iM'') were studied in temperature interval of 100-400 K for two frequencies (100 and 500 kHz). While the dielectric constant (') and loss ('') value increase as the temperature rises, their values decrease as the frequency rises. The increase in ' and '' is explained by thermal activation of charge carriers. Also, the ac value increases both frequency and temperature increase. The thermal activation energy was determined from slope of Arrhenius plot.

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“…The capacitance of depletion region of semiconductor devices is defined as: (Nicollian & Goetzberger, 1967;Sze, 1981;Nicollian & Brews, 1982;Tataroğlu & Altındal, 2006;Kim, 2016;Lambada et al, 2020),…”

Section: Figure 3 Rs-v Plots At 500 Khzmentioning

confidence: 99%

Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device

ATA>

Balbaşı

Tataroğlu

2023

Gazi University Journal of Science Part A: Engineering and Innovation

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Admittance measurements including capacitance (C) and conductance (G) of Al/Gr-PVA/p-Si (MPS) device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was investigated using the C-2-V characteristics. It was observed that the electronic parameters of the device changed depending on the illumination conditions. The doping concentration, Fermi energy and barrier height were obtained using the C-2-V data. The surface state (Nss) was also obtained using capacitance data. The results show that the device can be used as a photocapacitor.

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Capacitance-Voltage (C-V) Characteristics of Cu/n-type InP Schottky Diodes

Cited by 17 publications

References 25 publications

Numerical analysis of transport properties of ZnO based Schottky diode

Numerical analysis of transport properties of ZnO based Schottky diode

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device

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