Comment on ‘‘Influence of barrier height distribution on the parameters of Schottky diodes’’ [Appl. Phys. Lett. <b>65</b>, 575 (1994)]

Horváth, Zs. J.; Tuyen, Vo Van

doi:10.1063/1.114280

Cited by 4 publications

(1 citation statement)

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“…Werner and Gütller [1] did not take into account the influence of the series resistances in their model. Using the thermionic emission expression for the current, the influence of the series resistance can be modeled in three ways [16,17]. Figure 1 summarizes these three approaches; figures 1(a) and (b) represent the two limiting cases, full current spreading and no lateral current spreading, respectively.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of the inhomogeneous parameters of the Mo/4H–SiC Schottky barrier diodes

Latreche¹,

Ouennoughi

Weiß

2016

Semicond. Sci. Technol.

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The inhomogeneous parameters of Mo/4H-SiC Schottky barrier diodes were determined from current-voltage (I-V) characteristics in the temperature range of 303-498 K by using a general approach for the real Schottky diode. In this approach the total series resistances is divided into two resistances; the first one (R P ) is the sum of the series resistances (r) of the particular diodes connected in parallel and the second is the common resistance (R C ) to all particular diodes. The mean barrier height f ( ) and the standard deviation (σ) decrease linearly with decreasing temperature and they are between the values for the diodes with the two limiting cases; no current spreading and full current spreading. The series resistance R C increases, while the series resistance R P slightly decreases with decreasing temperature.

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Section: Introductionmentioning

confidence: 99%