Synthesis of nanostructures using charged nanoparticles spontaneously generated in the gas phase during chemical vapor deposition

Da-Seul, Kim; Hwang, Nong‐Moon

doi:10.1088/1361-6463/aae4b7

Cited by 15 publications

(7 citation statements)

References 146 publications

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“…However, there have been several puzzling phenomena that cannot be explained by such a classical crystallization mechanism. Recently, many researchers have reported an experimental evidence that many crystals including thin films grow by the building block of nanoparticles (NPs), which has been called 'non-classical crystallization' [16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

2020

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This study is based on the film growth by non-classical crystallization, where charged nanoparticles (NPs) are the building block of film deposition. Extensive studies about the generation of charged NPs and their contribution to film deposition have been made in the chemical vapor deposition (CVD) process. However, only a few studies have been made in the physical vapor deposition (PVD) process. Here, the possibility for Ti films to grow by charged Ti NPs was studied during radio frequency (RF) sputtering using Ti target. After the generation of charged Ti NPs was confirmed, their influence on the film quality was investigated. Charged Ti NPs were captured on amorphous carbon membranes with the electric bias of −70 V, 0 V, +5 V, +15 V and +30 V and examined by transmission electron microscopy (TEM). The number density of the Ti NPs decreased with increasing positive bias, which showed that some of Ti NPs were positively charged and repelled by the positively biased TEM membrane. Ti films were deposited on Si substrates with the bias of −70 V, 0 V and +30 V and analyzed by TEM, field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray reflectivity (XRR). The film deposited at −70 V had the highest thickness of 180 nm, calculated density of 4.974 g/cm3 and crystallinity, whereas the film deposited at +30 V had the lowest thickness of 92 nm, calculated density of 3.499 g/cm3 and crystallinity. This was attributed to the attraction of positively charged Ti NPs to the substrate at −70 V and to the landing of only small-sized neutral Ti NPs on the substrate at +30 V. These results indicate that the control of charged NPs is necessary to obtain a high quality thin film at room temperature.

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Section: Introductionmentioning

confidence: 99%

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

2020

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“…DC sputtering deposition of titanium metal film in argon ambient ensures a high deposition rate. The effect of the deposition parameters like sputtering power and the separation between the cathode and the anode on the characterization and structure of titanium thin films by the DC sputtering technique has been studied by many researchers [15][16][17][18][19][20]. While few researchers have studied the deposition of titanium thin films by the RF sputtering process, RF sputtering can get a feature of a high ionization degree according to the vibrations of the electrons in the plasma [21].…”

Section: Introductionmentioning

confidence: 99%

Improvement of Substrates Properties by Incorporating Titanium Nanoparticles Deposited by DC Diode Sputtering Approach

Hadi¹,

Jawad²,

Hassoon³

2022

JASN

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In this work, the synthesis of titanium thin films on two different substrates (glass and n-type Si), with thicknesses of 90 and 145 nm at two different times (5 and 10 min) respectively, have been obtained. The thin films have been successfully deposited on glass and silicon substrates using DC diode sputtering technique. The optical properties of the prepared thin films have been checked out using the optical reflectance spectrum. A significant reduction in surface reflectivity was observed at (10 min) sputtering time. The structural properties of the prepared thin films were studied using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). XRD results confirmed that titanium thin films had a hexagonal structure with preferred orientation on (002). The images of FESEM showed that all the samples had a uniform distribution of granular surface morphology. The grain sizes of the Ti nanostructure were estimated using Scherrers' analysis. The thickness of Ti thin film increased as the sputtering time increased for both glass and Si n-type substrates. The repeated experiments revealed that the most uniform Ti thin film is on Si substrate (n-type) with particle size 10 nm at deposition time 5 min.

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“…This new growth mechanism was supported by many experimental evidences. This new mechanism is referred to as "non-classical crystallization" [16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Effect of Pressure on the Film Deposition during RF Magnetron Sputtering Considering Charged Nanoparticles

et al. 2021

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Non-classical crystallization, in which charged nanoparticles (NPs) are the building blocks of film growth, has been extensively studied in chemical vapor deposition (CVD). Recently, a similar mechanism of film growth has been reported during radio frequency (RF) sputtering with a Ti target and DC magnetron sputtering using an Ag target. In this study, the effect of pressure on the generation of Ti NPs and on the film deposition was studied during RF sputtering with a Ti target. Ti NPs were captured on transmission electron microscopy (TEM) membranes with the electric biases of −30, 0, and +50 V under 20 and 80 mTorr. The number densities of the Ti NPs were 134, 103, and 21 per 100 × 100 nm2, respectively, with the biases of −30, 0, and +50 V under 20 mTorr and were 196, 98, and 0 per 100 × 100 nm2, respectively, with the biases of −30, 0, and +50 V under 80 mTorr, which was analyzed by TEM. The growth rate of Ti films deposited on Si substrates was insensitive to the substrate bias under 20 mTorr but was sensitive under 80 mTorr, with the thicknesses of 132, 133, 97, and 29 nm, respectively, after being deposited for 15 min with the substrate biases of −30, −10, 0, and +50 V. This sensitive dependence of the film growth rate on the substrate bias under 80 mTorr is in agreement with the sensitive dependence of the number density of Ti NPs on the substrate bias under 80 mTorr.

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Synthesis of nanostructures using charged nanoparticles spontaneously generated in the gas phase during chemical vapor deposition

Cited by 15 publications

References 146 publications

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

Generation of Charged Ti Nanoparticles and Their Deposition Behavior with a Substrate Bias during RF Magnetron Sputtering

Improvement of Substrates Properties by Incorporating Titanium Nanoparticles Deposited by DC Diode Sputtering Approach

Effect of Pressure on the Film Deposition during RF Magnetron Sputtering Considering Charged Nanoparticles

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