Effect of Pressure on the Film Deposition during RF Magnetron Sputtering Considering Charged Nanoparticles

Abstract

Non-classical crystallization, in which charged nanoparticles (NPs) are the building blocks of film growth, has been extensively studied in chemical vapor deposition (CVD). Recently, a similar mechanism of film growth has been reported during radio frequency (RF) sputtering with a Ti target and DC magnetron sputtering using an Ag target. In this study, the effect of pressure on the generation of Ti NPs and on the film deposition was studied during RF sputtering with a Ti target. Ti NPs were captured on transmission electron microscopy (TEM) membranes with the electric biases of −30, 0, and +50 V under 20 and 80 mTorr. The number densities of the Ti NPs were 134, 103, and 21 per 100 × 100 nm2, respectively, with the biases of −30, 0, and +50 V under 20 mTorr and were 196, 98, and 0 per 100 × 100 nm2, respectively, with the biases of −30, 0, and +50 V under 80 mTorr, which was analyzed by TEM. The growth rate of Ti films deposited on Si substrates was insensitive to the substrate bias under 20 mTorr but was sensitive under 80 mTorr, with the thicknesses of 132, 133, 97, and 29 nm, respectively, after being deposited for 15 min with the substrate biases of −30, −10, 0, and +50 V. This sensitive dependence of the film growth rate on the substrate bias under 80 mTorr is in agreement with the sensitive dependence of the number density of Ti NPs on the substrate bias under 80 mTorr.

Copper and Copper Nanoparticles Applications and Their Role against Infections: A Minireview

“…This is one of the most promising methods for applying thin layers due to the possibility of obtaining a homogeneous coating over a large area under controllable conditions [13]. The main disadvantage of this outdated method is related to the high cost of nanoparticle synthesis [14]. This method also allows the co-pulverization of the newly synthesized nanomaterials, which leads to an important characteristic: the antimicrobial activity [15].…”

Exploring Vacuum-Assisted Thin Films toward Supercapacitor Applications: Present Status and Future Prospects

“…The neutral nanoparticles most probably undergo Brownian motion and result in porous films, whereas charged nanoparticles self-assemble by epitaxial crystallization and result in compact and dense films. 64,88 Kim et al 89 studied the effect of pressure and biasing voltage on the deposition of Ti films on the Si substrate by RF sputtering. The FE-SEM images (Figure 13) depicted the variation in the film thickness deposited under various biasing voltages at a pressure of 80 mTorr for 15 min.…”

“…Kim et al 89 studied the effect of pressure and biasing voltage on the deposition of Ti films on the Si substrate by RF sputtering. The FE-SEM images ( Figure 13 ) depicted the variation in the film thickness deposited under various biasing voltages at a pressure of 80 mTorr for 15 min.…”

“… SEM images of the Ti thin films deposited on Si substrates at bias voltages of (a) −30 V, (b) −10 V, (c) 0 V, and (d) +50 V under 80 mTorr. Reprinted with permission from Kim et al 89 Copyright 2021 MDPI coatings. …”

Improvement of Substrates Properties by Incorporating Titanium Nanoparticles Deposited by DC Diode Sputtering Approach

“…Therefore, the growth of highly (002) oriented Ti films has been an important issue in sputtering. Ti thin films have been utilized in many applications such as biomedical applications, and micro-electro-mechanical system equipment technology due to their specific characterizations like excellent biocompatibility, and good thermal and chemical stabilization [11]. Titanium thin films can be largely obtained utilizing diverse sputtering like direct current (DC) sputtering [12], radio frequency (RF) sputtering process [13], high power impulse magnetron sputtering [14], which is a familiar process in the industry to achieve thin-films with high reproducing and growth rate.…”