In this work, the synthesis of titanium thin films on two different substrates (glass and n-type Si), with thicknesses of 90 and 145 nm at two different times (5 and 10 min) respectively, have been obtained. The thin films have been successfully deposited on glass and silicon substrates using DC diode sputtering technique. The optical properties of the prepared thin films have been checked out using the optical reflectance spectrum. A significant reduction in surface reflectivity was observed at (10 min) sputtering time. The structural properties of the prepared thin films were studied using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). XRD results confirmed that titanium thin films had a hexagonal structure with preferred orientation on (002). The images of FESEM showed that all the samples had a uniform distribution of granular surface morphology. The grain sizes of the Ti nanostructure were estimated using Scherrers' analysis. The thickness of Ti thin film increased as the sputtering time increased for both glass and Si n-type substrates. The repeated experiments revealed that the most uniform Ti thin film is on Si substrate (n-type) with particle size 10 nm at deposition time 5 min.

In this study, In2O3 thin films were deposited on quartz substrates by pulsed laser deposition technique at room temperature and followed by thermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical band gap was found to increase with the annealing temperature from 3.5 to 3.85 eV and the transmittance was observed above 90%. XRD results show that the films are polycrystalline in nature and crystallizes with preferred orientation (222). SEM images show that the films are high homogenous and they contained uniformly distributed small grains.

The manufacturing of vacuum sensors is critical to several vacuumbased applications. Porous silicon (PSi) was chosen as the vacuum sensor due to the possibility of moving air particles settled inside the pores while being put in the vacuum. The characteristics of porous silicon sensing to the evacuation of gases during vacuum was inferred by changing in the electrical resistivity. This work depends on the change in the electrical resistance of the PSi layers that was prepared via photo-electrochemical technique on the n-type (100) oriented silicon wafer. The surface topography of porous silicon is necessary to understand the morphological properties. Therefore, structural and morphological characterization of PSi samples were studied and analyzed using the scanning electron microscope (SEM) and X-Ray Diffraction (XRD) pattern. The etching process was carried out with various etching times, hydrofluoric acid (HF) concentration, and constant current density. The results showed that the pore size is increased as the etching time increased. The etching time produced pores of different sizes. The electrical resistance values were calculated after placing the sample in the vacuum system, starting from atmospheric pressure down to 10 −5 torr. The electrical properties of PSi indicate that electrical resistance gradually decreases with increasing vacuum pressure.

 The samples have a hexagonal wurtzite structure.  All the samples showed a uniform distribution of granular surface shape morphology.  Zn thin film thicknesses were increased as the sputtering time increased for all substrates.  The best result was the deposition of zinc nanoparticles on Si (p -type) at 1 min, where the particle size was at the peak of 7 nm.Zn thin films have been successfully deposited on two different substrates, FTO and p-type Si (111), with thickness (112, 186) nm at (1 and 8) min, respectively, via DC sputtering technique in this work. Structural properties of the prepared thin films were studied using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM ). XRD results showed that the samples have a hexagonal wurtzite structure. From the results of FESEM images, all the samples showed a uniform distribution of granular surface shape morphology.The grain sizes of the Zn thin films were estimated based on measured X-ray diffraction patterns. Zn thin film thicknesses were increased as the sputtering time increased for all substrates. The best result was the deposition of zinc nanoparticles on Si (p-type) at 1 min, where the particle size was at the peak of 7 nm.